Temperature dependence of the direct band gap of Si-containing carbon nitride crystalline films

D. Lin, C. Li, Y. Huang, Y. Jong, Y. Chen

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We have measured the temperature dependence of the spectral features in the vicinity of the direct gap (Formula presented) of Si-containing carbon nitride polycrystalline films in the temperature range between 20 and 500 K using piezoreflectance (PzR). From a detailed line-shape fit to the PzR spectra, the (Formula presented) and the broadening parameter of direct band-to-band transitions at various temperatures are determined. The temperature dependence of (Formula presented) are analyzed by the Varshni equation [Physica 34, 149 (1967)] and an empirical expression proposed by O’Donnel and Chen [Appl. Phys. Lett. 58, 2924 (1991)]. The parameters that describe the temperature dependence of the energy gap of the material are evaluated and discussed. The broadening parameter is found to be insensitive to the temperature variation.

Original languageEnglish
Pages (from-to)6498-6501
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
Publication statusPublished - 1997 Jan 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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