Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs

H. J. Chen, D. Y. Lin, Y. S. Huang, R. C. Tu, Y. K. Su, K. K. Tiong

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have measured the temperature dependence of the spectral features near the direct bandgap of a Zn0.88Mg0.12S0.18Se0.82 film, grown by molecular beam epitaxy on a (001) GaAs substrate, in the temperature range between 15 and 300 K using contactless electroreflectance. The parameters that describe the temperature variations of the energy and broadening function of the band-edge exciton have been evaluated.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalSemiconductor Science and Technology
Volume14
Issue number1
DOIs
Publication statusPublished - 1999 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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