We have measured the temperature dependence of the spectral features near the direct bandgap of a Zn0.88Mg0.12S0.18Se0.82 film, grown by molecular beam epitaxy on a (001) GaAs substrate, in the temperature range between 15 and 300 K using contactless electroreflectance. The parameters that describe the temperature variations of the energy and broadening function of the band-edge exciton have been evaluated.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry