Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs

H. J. Chen, Der-Yuh Lin, Y. S. Huang, R. C. Tu, Y. K. Su, K. K. Tiong

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have measured the temperature dependence of the spectral features near the direct bandgap of a Zn0.88Mg0.12S0.18Se0.82 film, grown by molecular beam epitaxy on a (001) GaAs substrate, in the temperature range between 15 and 300 K using contactless electroreflectance. The parameters that describe the temperature variations of the energy and broadening function of the band-edge exciton have been evaluated.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalSemiconductor Science and Technology
Volume14
Issue number1
DOIs
Publication statusPublished - 1999 Dec 1

Fingerprint

Epilayers
Excitons
excitons
temperature dependence
molecular beam epitaxy
Molecular beam epitaxy
Temperature
temperature
Energy gap
Substrates
LDS 751
gallium arsenide
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chen, H. J. ; Lin, Der-Yuh ; Huang, Y. S. ; Tu, R. C. ; Su, Y. K. ; Tiong, K. K. / Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs. In: Semiconductor Science and Technology. 1999 ; Vol. 14, No. 1. pp. 85-88.
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Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs. / Chen, H. J.; Lin, Der-Yuh; Huang, Y. S.; Tu, R. C.; Su, Y. K.; Tiong, K. K.

In: Semiconductor Science and Technology, Vol. 14, No. 1, 01.12.1999, p. 85-88.

Research output: Contribution to journalArticle

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AU - Chen, H. J.

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AU - Tu, R. C.

AU - Su, Y. K.

AU - Tiong, K. K.

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