Temperature dependence of Ron,sp in silicon carbide and GaAs Schottky diode

Ji Luo, Kuan-Jung Chung, Hu Huang, Joseph B. Bernstein

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

The critical properties of power devices are high reverse breakdown voltage and low forward ON state resistance, Ron,sp, during high forward current density operation. Both of these parameters are very sensitive to temperature. Nowadays silicon carbide (SiC) and GaAs are two most important materials for power device applications. SiC has been widely accepted as being superior to GaAs because it has much higher electric breakdown field, saturated electron drift velocity and thermal conductivity. In this work, the electrical performance and reliability of SiC Schottky diodes (SD) are evaluated and compared to commercially available GaAs SDs. High temperature device characterization has been performed. The specific on resistance Ron,sp was found to increase with temperature according to T0.72 dependence for GaAs, T1.89 for SiC. The strong temperature dependence of Ron,sp is consistent with phonon scattering theory. Based on Baliga's figure-of-merit (BFOM) model, our result shows that under higher operating temperature (> 210°C) the GaAs devices have lower Ron,sp than SiC, thus, it may be preferable to use GaAs over SiC for some high temperature power applications.

Original languageEnglish
Pages (from-to)425-426
Number of pages2
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 2002 Jan 1
EventProceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings - Dallas, TX, United States
Duration: 2002 Apr 72002 Apr 11

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Silicon carbide
Diodes
Electric breakdown
Temperature
Phonon scattering
Thermal conductivity
Current density
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

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abstract = "The critical properties of power devices are high reverse breakdown voltage and low forward ON state resistance, Ron,sp, during high forward current density operation. Both of these parameters are very sensitive to temperature. Nowadays silicon carbide (SiC) and GaAs are two most important materials for power device applications. SiC has been widely accepted as being superior to GaAs because it has much higher electric breakdown field, saturated electron drift velocity and thermal conductivity. In this work, the electrical performance and reliability of SiC Schottky diodes (SD) are evaluated and compared to commercially available GaAs SDs. High temperature device characterization has been performed. The specific on resistance Ron,sp was found to increase with temperature according to T0.72 dependence for GaAs, T1.89 for SiC. The strong temperature dependence of Ron,sp is consistent with phonon scattering theory. Based on Baliga's figure-of-merit (BFOM) model, our result shows that under higher operating temperature (> 210°C) the GaAs devices have lower Ron,sp than SiC, thus, it may be preferable to use GaAs over SiC for some high temperature power applications.",
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Temperature dependence of Ron,sp in silicon carbide and GaAs Schottky diode. / Luo, Ji; Chung, Kuan-Jung; Huang, Hu; Bernstein, Joseph B.

In: Annual Proceedings - Reliability Physics (Symposium), 01.01.2002, p. 425-426.

Research output: Contribution to journalConference article

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AU - Luo, Ji

AU - Chung, Kuan-Jung

AU - Huang, Hu

AU - Bernstein, Joseph B.

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N2 - The critical properties of power devices are high reverse breakdown voltage and low forward ON state resistance, Ron,sp, during high forward current density operation. Both of these parameters are very sensitive to temperature. Nowadays silicon carbide (SiC) and GaAs are two most important materials for power device applications. SiC has been widely accepted as being superior to GaAs because it has much higher electric breakdown field, saturated electron drift velocity and thermal conductivity. In this work, the electrical performance and reliability of SiC Schottky diodes (SD) are evaluated and compared to commercially available GaAs SDs. High temperature device characterization has been performed. The specific on resistance Ron,sp was found to increase with temperature according to T0.72 dependence for GaAs, T1.89 for SiC. The strong temperature dependence of Ron,sp is consistent with phonon scattering theory. Based on Baliga's figure-of-merit (BFOM) model, our result shows that under higher operating temperature (> 210°C) the GaAs devices have lower Ron,sp than SiC, thus, it may be preferable to use GaAs over SiC for some high temperature power applications.

AB - The critical properties of power devices are high reverse breakdown voltage and low forward ON state resistance, Ron,sp, during high forward current density operation. Both of these parameters are very sensitive to temperature. Nowadays silicon carbide (SiC) and GaAs are two most important materials for power device applications. SiC has been widely accepted as being superior to GaAs because it has much higher electric breakdown field, saturated electron drift velocity and thermal conductivity. In this work, the electrical performance and reliability of SiC Schottky diodes (SD) are evaluated and compared to commercially available GaAs SDs. High temperature device characterization has been performed. The specific on resistance Ron,sp was found to increase with temperature according to T0.72 dependence for GaAs, T1.89 for SiC. The strong temperature dependence of Ron,sp is consistent with phonon scattering theory. Based on Baliga's figure-of-merit (BFOM) model, our result shows that under higher operating temperature (> 210°C) the GaAs devices have lower Ron,sp than SiC, thus, it may be preferable to use GaAs over SiC for some high temperature power applications.

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