Temperature dependence of quantized states in an In0.86Ga0.14As0.3p0.7/Inp quantum well heterostructure

C. F. Li, D. Y. Lin, Y. S. Huang, Y. F. Chen, K. K. Tiong

Research output: Contribution to journalArticle

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Abstract

Piezoreflectance (PzR) and contactless electroreflectance (CER) measurements of an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure as a function of temperature in the range of 20-300 K have been carried out. A careful analysis of the PzR and CER spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The parameters that describe the temperature dependence of EmnH(L) are evaluated. A detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The temperature dependence of the linewidth of 11H exciton is evaluated and compared with that of the bulk material.

Original languageEnglish
Pages (from-to)400-405
Number of pages6
JournalJournal of Applied Physics
Volume81
Issue number1
DOIs
Publication statusPublished - 1997 Jan 1

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quantum wells
temperature dependence
temperature
conduction bands
excitons
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Li, C. F. ; Lin, D. Y. ; Huang, Y. S. ; Chen, Y. F. ; Tiong, K. K. / Temperature dependence of quantized states in an In0.86Ga0.14As0.3p0.7/Inp quantum well heterostructure. In: Journal of Applied Physics. 1997 ; Vol. 81, No. 1. pp. 400-405.
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Temperature dependence of quantized states in an In0.86Ga0.14As0.3p0.7/Inp quantum well heterostructure. / Li, C. F.; Lin, D. Y.; Huang, Y. S.; Chen, Y. F.; Tiong, K. K.

In: Journal of Applied Physics, Vol. 81, No. 1, 01.01.1997, p. 400-405.

Research output: Contribution to journalArticle

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