Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well

W. S. Chi, Der-Yuh Lin, Y. S. Huang, H. Qiang, F. H. Pollak, D. L. Mathine, G. N. Maracas

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Photoreflectance (PR), contactless electroreflectance (CER) and piezoreflectance (PzR) measurements of an InGaAs/GaAs strained asymmetric triangular quantum well (ATQW) heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using the digital alloy compositional grading method. A careful analysis of the PR, CER and PzR spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state to the nth heavy(light)-hole band state. Comparison of the observed intersubband transitions with a theoretical calculation based on the envelope function model, including the effects of strain, provide a self-consistent check of the ATQW composition profile. The detailed study of the temperature dependence of the excitonic transition energies indicates that the potential profile of the ATQW varies at different temperatures. The parameters that describe the temperature dependence of EmnH(L) are evaluated. The anomalous behaviour of the temperature dependence of the linewidth of 11H, Γ11H(T), is compared with recent results for GaAs/AlGaAs and InGaAs/GaAs symmetric rectangular quantum wells of comparable dimensions.

Original languageEnglish
Pages (from-to)345-351
Number of pages7
JournalSemiconductor Science and Technology
Volume11
Issue number3
DOIs
Publication statusPublished - 1996 Mar 1

Fingerprint

Semiconductor quantum wells
quantum wells
temperature dependence
Temperature
profiles
aluminum gallium arsenides
Electron transitions
conduction bands
Conduction bands
molecular beam epitaxy
envelopes
Molecular beam epitaxy
Linewidth
Heterojunctions
temperature
gallium arsenide
Chemical analysis
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chi, W. S. ; Lin, Der-Yuh ; Huang, Y. S. ; Qiang, H. ; Pollak, F. H. ; Mathine, D. L. ; Maracas, G. N. / Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well. In: Semiconductor Science and Technology. 1996 ; Vol. 11, No. 3. pp. 345-351.
@article{c06c25efcbdd4a65bf3c90b916f583b0,
title = "Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well",
abstract = "Photoreflectance (PR), contactless electroreflectance (CER) and piezoreflectance (PzR) measurements of an InGaAs/GaAs strained asymmetric triangular quantum well (ATQW) heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using the digital alloy compositional grading method. A careful analysis of the PR, CER and PzR spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state to the nth heavy(light)-hole band state. Comparison of the observed intersubband transitions with a theoretical calculation based on the envelope function model, including the effects of strain, provide a self-consistent check of the ATQW composition profile. The detailed study of the temperature dependence of the excitonic transition energies indicates that the potential profile of the ATQW varies at different temperatures. The parameters that describe the temperature dependence of EmnH(L) are evaluated. The anomalous behaviour of the temperature dependence of the linewidth of 11H, Γ11H(T), is compared with recent results for GaAs/AlGaAs and InGaAs/GaAs symmetric rectangular quantum wells of comparable dimensions.",
author = "Chi, {W. S.} and Der-Yuh Lin and Huang, {Y. S.} and H. Qiang and Pollak, {F. H.} and Mathine, {D. L.} and Maracas, {G. N.}",
year = "1996",
month = "3",
day = "1",
doi = "10.1088/0268-1242/11/3/012",
language = "English",
volume = "11",
pages = "345--351",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "3",

}

Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well. / Chi, W. S.; Lin, Der-Yuh; Huang, Y. S.; Qiang, H.; Pollak, F. H.; Mathine, D. L.; Maracas, G. N.

In: Semiconductor Science and Technology, Vol. 11, No. 3, 01.03.1996, p. 345-351.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well

AU - Chi, W. S.

AU - Lin, Der-Yuh

AU - Huang, Y. S.

AU - Qiang, H.

AU - Pollak, F. H.

AU - Mathine, D. L.

AU - Maracas, G. N.

PY - 1996/3/1

Y1 - 1996/3/1

N2 - Photoreflectance (PR), contactless electroreflectance (CER) and piezoreflectance (PzR) measurements of an InGaAs/GaAs strained asymmetric triangular quantum well (ATQW) heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using the digital alloy compositional grading method. A careful analysis of the PR, CER and PzR spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state to the nth heavy(light)-hole band state. Comparison of the observed intersubband transitions with a theoretical calculation based on the envelope function model, including the effects of strain, provide a self-consistent check of the ATQW composition profile. The detailed study of the temperature dependence of the excitonic transition energies indicates that the potential profile of the ATQW varies at different temperatures. The parameters that describe the temperature dependence of EmnH(L) are evaluated. The anomalous behaviour of the temperature dependence of the linewidth of 11H, Γ11H(T), is compared with recent results for GaAs/AlGaAs and InGaAs/GaAs symmetric rectangular quantum wells of comparable dimensions.

AB - Photoreflectance (PR), contactless electroreflectance (CER) and piezoreflectance (PzR) measurements of an InGaAs/GaAs strained asymmetric triangular quantum well (ATQW) heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using the digital alloy compositional grading method. A careful analysis of the PR, CER and PzR spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state to the nth heavy(light)-hole band state. Comparison of the observed intersubband transitions with a theoretical calculation based on the envelope function model, including the effects of strain, provide a self-consistent check of the ATQW composition profile. The detailed study of the temperature dependence of the excitonic transition energies indicates that the potential profile of the ATQW varies at different temperatures. The parameters that describe the temperature dependence of EmnH(L) are evaluated. The anomalous behaviour of the temperature dependence of the linewidth of 11H, Γ11H(T), is compared with recent results for GaAs/AlGaAs and InGaAs/GaAs symmetric rectangular quantum wells of comparable dimensions.

UR - http://www.scopus.com/inward/record.url?scp=0030108551&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030108551&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/11/3/012

DO - 10.1088/0268-1242/11/3/012

M3 - Article

VL - 11

SP - 345

EP - 351

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

ER -