Abstract
Photoreflectance (PR), contactless electroreflectance (CER) and piezoreflectance (PzR) measurements of an InGaAs/GaAs strained asymmetric triangular quantum well (ATQW) heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using the digital alloy compositional grading method. A careful analysis of the PR, CER and PzR spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state to the nth heavy(light)-hole band state. Comparison of the observed intersubband transitions with a theoretical calculation based on the envelope function model, including the effects of strain, provide a self-consistent check of the ATQW composition profile. The detailed study of the temperature dependence of the excitonic transition energies indicates that the potential profile of the ATQW varies at different temperatures. The parameters that describe the temperature dependence of EmnH(L) are evaluated. The anomalous behaviour of the temperature dependence of the linewidth of 11H, Γ11H(T), is compared with recent results for GaAs/AlGaAs and InGaAs/GaAs symmetric rectangular quantum wells of comparable dimensions.
| Original language | English |
|---|---|
| Pages (from-to) | 345-351 |
| Number of pages | 7 |
| Journal | Semiconductor Science and Technology |
| Volume | 11 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1996 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well. / Chi, W. S.; Lin, Der-Yuh; Huang, Y. S.; Qiang, H.; Pollak, F. H.; Mathine, D. L.; Maracas, G. N.
In: Semiconductor Science and Technology, Vol. 11, No. 3, 01.03.1996, p. 345-351.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well
AU - Chi, W. S.
AU - Lin, Der-Yuh
AU - Huang, Y. S.
AU - Qiang, H.
AU - Pollak, F. H.
AU - Mathine, D. L.
AU - Maracas, G. N.
PY - 1996/3/1
Y1 - 1996/3/1
N2 - Photoreflectance (PR), contactless electroreflectance (CER) and piezoreflectance (PzR) measurements of an InGaAs/GaAs strained asymmetric triangular quantum well (ATQW) heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using the digital alloy compositional grading method. A careful analysis of the PR, CER and PzR spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state to the nth heavy(light)-hole band state. Comparison of the observed intersubband transitions with a theoretical calculation based on the envelope function model, including the effects of strain, provide a self-consistent check of the ATQW composition profile. The detailed study of the temperature dependence of the excitonic transition energies indicates that the potential profile of the ATQW varies at different temperatures. The parameters that describe the temperature dependence of EmnH(L) are evaluated. The anomalous behaviour of the temperature dependence of the linewidth of 11H, Γ11H(T), is compared with recent results for GaAs/AlGaAs and InGaAs/GaAs symmetric rectangular quantum wells of comparable dimensions.
AB - Photoreflectance (PR), contactless electroreflectance (CER) and piezoreflectance (PzR) measurements of an InGaAs/GaAs strained asymmetric triangular quantum well (ATQW) heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using the digital alloy compositional grading method. A careful analysis of the PR, CER and PzR spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state to the nth heavy(light)-hole band state. Comparison of the observed intersubband transitions with a theoretical calculation based on the envelope function model, including the effects of strain, provide a self-consistent check of the ATQW composition profile. The detailed study of the temperature dependence of the excitonic transition energies indicates that the potential profile of the ATQW varies at different temperatures. The parameters that describe the temperature dependence of EmnH(L) are evaluated. The anomalous behaviour of the temperature dependence of the linewidth of 11H, Γ11H(T), is compared with recent results for GaAs/AlGaAs and InGaAs/GaAs symmetric rectangular quantum wells of comparable dimensions.
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U2 - 10.1088/0268-1242/11/3/012
DO - 10.1088/0268-1242/11/3/012
M3 - Article
VL - 11
SP - 345
EP - 351
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3
ER -