Temperature dependence of quantized states in a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure

Der-Yuh Lin, Chi Feng Li, Ying Sheng Huang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The piezoreflectance (PzR) measurements of a GaAs/Al0.23Ga0.77 As asymmetric triangular quantum well heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using a digital alloy compositional grading method. A comparison of the PzR and photoreflectance spectra allows us to identify the features associated with the heavy- and light-hole valence bands unambiguously. The detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The anomalous behavior of the temperature dependence of the linewidth of 11H excitonic feature is discussed.

Original languageEnglish
Pages (from-to)3576-3582
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number6 SUPPL. A
Publication statusPublished - 1996 Jun 1

Fingerprint

Semiconductor quantum wells
Heterojunctions
quantum wells
temperature dependence
Temperature
temperature
molecular beam epitaxy
valence
Electron transitions
Valence bands
Molecular beam epitaxy
Linewidth
Energy gap
energy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{2b98b8ce861240d6a4b67e7fc16e48bf,
title = "Temperature dependence of quantized states in a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure",
abstract = "The piezoreflectance (PzR) measurements of a GaAs/Al0.23Ga0.77 As asymmetric triangular quantum well heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using a digital alloy compositional grading method. A comparison of the PzR and photoreflectance spectra allows us to identify the features associated with the heavy- and light-hole valence bands unambiguously. The detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The anomalous behavior of the temperature dependence of the linewidth of 11H excitonic feature is discussed.",
author = "Der-Yuh Lin and Li, {Chi Feng} and Huang, {Ying Sheng}",
year = "1996",
month = "6",
day = "1",
language = "English",
volume = "35",
pages = "3576--3582",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 SUPPL. A",

}

TY - JOUR

T1 - Temperature dependence of quantized states in a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure

AU - Lin, Der-Yuh

AU - Li, Chi Feng

AU - Huang, Ying Sheng

PY - 1996/6/1

Y1 - 1996/6/1

N2 - The piezoreflectance (PzR) measurements of a GaAs/Al0.23Ga0.77 As asymmetric triangular quantum well heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using a digital alloy compositional grading method. A comparison of the PzR and photoreflectance spectra allows us to identify the features associated with the heavy- and light-hole valence bands unambiguously. The detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The anomalous behavior of the temperature dependence of the linewidth of 11H excitonic feature is discussed.

AB - The piezoreflectance (PzR) measurements of a GaAs/Al0.23Ga0.77 As asymmetric triangular quantum well heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using a digital alloy compositional grading method. A comparison of the PzR and photoreflectance spectra allows us to identify the features associated with the heavy- and light-hole valence bands unambiguously. The detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The anomalous behavior of the temperature dependence of the linewidth of 11H excitonic feature is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030170280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030170280&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030170280

VL - 35

SP - 3576

EP - 3582

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 SUPPL. A

ER -