TaSi2 nanowires: A potential field emitter and interconnect

Yu Lun Chueh, Mong Tzong Ko, Li Jen Chou, Lih Juann Chen, Cen Shawn Wu, Chii Dong Chen

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Abstract

TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950°C in an ambient containing Ta vapor. The nanowires could be grown up to 13 μm in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/μm and the threshold field is down to 6 V/μm with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties with a remarkable high failure current density of 3 × 10 8 A cm-2. In addition, effects of annealing temperatures and capability of metal suicide mediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nanooptoelectronics.

Original languageEnglish
Pages (from-to)1637-1644
Number of pages8
JournalNano Letters
Volume6
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Chueh, Y. L., Ko, M. T., Chou, L. J., Chen, L. J., Wu, C. S., & Chen, C. D. (2006). TaSi2 nanowires: A potential field emitter and interconnect. Nano Letters, 6(8), 1637-1644. https://doi.org/10.1021/nl060614n