Abstract
TaSi2 nanowires have been synthesized on a Si substrate by annealing NiSi2 films at 950°C in an ambient containing Ta vapor. The nanowires could be grown up to 13 μm in length. Field-emission measurements show that the turn-on field is low at 4-4.5 V/μm and the threshold field is down to 6 V/μm with the field enhancement factor as high as 1800. The metallic TaSi2 nanowires exhibit excellent electrical properties with a remarkable high failure current density of 3 × 10 8 A cm-2. In addition, effects of annealing temperatures and capability of metal suicide mediation layer on the growth of nanowires are addressed. This simple approach promises future applications in nanoelectronics and nanooptoelectronics.
| Original language | English |
|---|---|
| Pages (from-to) | 1637-1644 |
| Number of pages | 8 |
| Journal | Nano Letters |
| Volume | 6 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2006 Aug 1 |
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
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Chueh, Y. L., Ko, M. T., Chou, L. J., Chen, L. J., Wu, C. S., & Chen, C. D. (2006). TaSi2 nanowires: A potential field emitter and interconnect. Nano Letters, 6(8), 1637-1644. https://doi.org/10.1021/nl060614n