Tandem structure for efficiency improvement in GaN based light-emitting diodes

Miao Chan Tsai, Benjamin Leung, Ta Cheng Hsu, Yen Kuang Kuo

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The improvement in efficiency of nitride-based light-emitting diodes by the implementation of a vertically stacked tandem structure is investigated. The electrical and optical characteristics of an LED with a tunnel junction inserted between two active regions are modeled, and the wall-plug efficiency gain of the tandem LED is shown to start at 4.2% at low output powers (27.6 mW), with increasing efficiency gains with increased output power due to the alleviation of efficiency droop. The TLED concept further enables optimization of device structure, allowing removal of electron blocking layer, and optimization of number of quantum wells for improvement in efficiency.

Original languageEnglish
Article number6780638
Pages (from-to)1801-1806
Number of pages6
JournalJournal of Lightwave Technology
Volume32
Issue number9
DOIs
Publication statusPublished - 2014 May 1

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light emitting diodes
optimization
output
plugs
tunnel junctions
nitrides
quantum wells
electrons

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Tsai, Miao Chan ; Leung, Benjamin ; Hsu, Ta Cheng ; Kuo, Yen Kuang. / Tandem structure for efficiency improvement in GaN based light-emitting diodes. In: Journal of Lightwave Technology. 2014 ; Vol. 32, No. 9. pp. 1801-1806.
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Tandem structure for efficiency improvement in GaN based light-emitting diodes. / Tsai, Miao Chan; Leung, Benjamin; Hsu, Ta Cheng; Kuo, Yen Kuang.

In: Journal of Lightwave Technology, Vol. 32, No. 9, 6780638, 01.05.2014, p. 1801-1806.

Research output: Contribution to journalArticle

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