Surface texturing of Ga-doped ZnO thin films by pulsed direct-current magnetron sputtering for photovoltaic applications

Y. C. Lin, W. T. Yen, C. H. Shen, P. C. Yao

Research output: Contribution to journalArticle

Abstract

In this study, Ga-doped ZnO (GZO) transparent conducting thin films were prepared by pulsed direct-current magnetron sputtering, providing good transparency and relatively low resistivity. The films were further etched in different aqueous solutions, 0.5% HCl, 5% oxalic acid, and 33% KOH, to modify their light-scattering properties. The results showed that film textured by 0.5% HCl aq for 30 s had total optical transparency of T total = 77.4% and haze value of H T = 0.16, with electrical resistivity of ρ = 4.9 × 10 -4 Ω-cm. For film textured in 5% oxalic acid solution for 75 s, the lowest electrical resistivity of 4.3 × 10 -4 Ω-cm was achieved with relatively high total optical transparency of T total = 75.1%, as well as a more ideal haze value of H T = 0.3. Film textured in 33% KOH solution for 135 s (500 nm thickness) had optimal electrical conductivity of 5.1 × 10 - Q-cm with T total = 75.6%, and a relatively low haze value of H T = 0.12. GZO film textured with an agitated etch of 5% oxalic acid at 300 K would be the most suitable candidate for photovoltaic applications due to its high transparency and good electrical conducting properties.

Original languageEnglish
Pages (from-to)442-450
Number of pages9
JournalJournal of Electronic Materials
Volume41
Issue number3
DOIs
Publication statusPublished - 2012 Mar 1

Fingerprint

Texturing
Magnetron sputtering
magnetron sputtering
Oxalic Acid
direct current
Transparency
oxalic acid
Oxalic acid
haze
Thin films
thin films
electrical resistivity
conduction
Light scattering
light scattering
aqueous solutions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Surface texturing of Ga-doped ZnO thin films by pulsed direct-current magnetron sputtering for photovoltaic applications",
abstract = "In this study, Ga-doped ZnO (GZO) transparent conducting thin films were prepared by pulsed direct-current magnetron sputtering, providing good transparency and relatively low resistivity. The films were further etched in different aqueous solutions, 0.5{\%} HCl, 5{\%} oxalic acid, and 33{\%} KOH, to modify their light-scattering properties. The results showed that film textured by 0.5{\%} HCl aq for 30 s had total optical transparency of T total = 77.4{\%} and haze value of H T = 0.16, with electrical resistivity of ρ = 4.9 × 10 -4 Ω-cm. For film textured in 5{\%} oxalic acid solution for 75 s, the lowest electrical resistivity of 4.3 × 10 -4 Ω-cm was achieved with relatively high total optical transparency of T total = 75.1{\%}, as well as a more ideal haze value of H T = 0.3. Film textured in 33{\%} KOH solution for 135 s (500 nm thickness) had optimal electrical conductivity of 5.1 × 10 - Q-cm with T total = 75.6{\%}, and a relatively low haze value of H T = 0.12. GZO film textured with an agitated etch of 5{\%} oxalic acid at 300 K would be the most suitable candidate for photovoltaic applications due to its high transparency and good electrical conducting properties.",
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Surface texturing of Ga-doped ZnO thin films by pulsed direct-current magnetron sputtering for photovoltaic applications. / Lin, Y. C.; Yen, W. T.; Shen, C. H.; Yao, P. C.

In: Journal of Electronic Materials, Vol. 41, No. 3, 01.03.2012, p. 442-450.

Research output: Contribution to journalArticle

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