Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications

W. T. Yen, Yi-Cheng or Y. C. Lin, J. H. Ke

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

Transparent conducting thin films of ZnO:Al (Al-doped ZnO, AZO) were prepared via pulsed DC magnetron sputtering with good transparency and relatively lower resistivity. The AZO films with 800 nm in thickness were deposited on soda-lime glass substrates keeping at 473 K under 0.4 Pa working pressure, 150 W power, 100 μs duty time, 5 μs pulse reverse time, 10 kHz pulse frequency and 95% duty cycle. The as-deposited AZO thin films has resistivity of 6.39 × 10 -4 Ω cm measured at room temperature with average visible optical transmittance, T total of 81.9% under which the carrier concentration and mobility were 1.95 × 10 21 cm -3 and 5.02 cm 2 V -1 s -1 , respectively. The films were further etched in different aqueous solutions, 0.5% HCl, 5% oxalic acid, 33% KOH, to conform light scattering properties. The resultant films etched in 0.5% HCl solution for 30 s exhibited high T total = 78.4% with haze value, H T = 0.1 and good electrical properties, ρ = 8.5 × 10 -4 Ω cm while those etched in 5% oxalic acid for 150 s had desirable H T = 0.2 and relatively low electrical resistivity, ρ = 7.9 × 10 -4 Ω cm. However, the visible transmittance, T total was declined to 72.1%.

Original languageEnglish
Pages (from-to)960-968
Number of pages9
JournalApplied Surface Science
Volume257
Issue number3
DOIs
Publication statusPublished - 2010 Nov 15

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Magnetron sputtering
Oxalic Acid
Oxalic acid
Thin films
Carrier mobility
Opacity
Lime
Light scattering
Transparency
Carrier concentration
Electric properties
Glass
Substrates
Thin film solar cells
Temperature
soda lime

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications",
abstract = "Transparent conducting thin films of ZnO:Al (Al-doped ZnO, AZO) were prepared via pulsed DC magnetron sputtering with good transparency and relatively lower resistivity. The AZO films with 800 nm in thickness were deposited on soda-lime glass substrates keeping at 473 K under 0.4 Pa working pressure, 150 W power, 100 μs duty time, 5 μs pulse reverse time, 10 kHz pulse frequency and 95{\%} duty cycle. The as-deposited AZO thin films has resistivity of 6.39 × 10 -4 Ω cm measured at room temperature with average visible optical transmittance, T total of 81.9{\%} under which the carrier concentration and mobility were 1.95 × 10 21 cm -3 and 5.02 cm 2 V -1 s -1 , respectively. The films were further etched in different aqueous solutions, 0.5{\%} HCl, 5{\%} oxalic acid, 33{\%} KOH, to conform light scattering properties. The resultant films etched in 0.5{\%} HCl solution for 30 s exhibited high T total = 78.4{\%} with haze value, H T = 0.1 and good electrical properties, ρ = 8.5 × 10 -4 Ω cm while those etched in 5{\%} oxalic acid for 150 s had desirable H T = 0.2 and relatively low electrical resistivity, ρ = 7.9 × 10 -4 Ω cm. However, the visible transmittance, T total was declined to 72.1{\%}.",
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Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications. / Yen, W. T.; Lin, Yi-Cheng or Y. C.; Ke, J. H.

In: Applied Surface Science, Vol. 257, No. 3, 15.11.2010, p. 960-968.

Research output: Contribution to journalArticle

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AB - Transparent conducting thin films of ZnO:Al (Al-doped ZnO, AZO) were prepared via pulsed DC magnetron sputtering with good transparency and relatively lower resistivity. The AZO films with 800 nm in thickness were deposited on soda-lime glass substrates keeping at 473 K under 0.4 Pa working pressure, 150 W power, 100 μs duty time, 5 μs pulse reverse time, 10 kHz pulse frequency and 95% duty cycle. The as-deposited AZO thin films has resistivity of 6.39 × 10 -4 Ω cm measured at room temperature with average visible optical transmittance, T total of 81.9% under which the carrier concentration and mobility were 1.95 × 10 21 cm -3 and 5.02 cm 2 V -1 s -1 , respectively. The films were further etched in different aqueous solutions, 0.5% HCl, 5% oxalic acid, 33% KOH, to conform light scattering properties. The resultant films etched in 0.5% HCl solution for 30 s exhibited high T total = 78.4% with haze value, H T = 0.1 and good electrical properties, ρ = 8.5 × 10 -4 Ω cm while those etched in 5% oxalic acid for 150 s had desirable H T = 0.2 and relatively low electrical resistivity, ρ = 7.9 × 10 -4 Ω cm. However, the visible transmittance, T total was declined to 72.1%.

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