Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

Yi-Cheng or Y. C. Lin, B. L. Wang, W. T. Yen, Chih-Hsiung Shen

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21 Citations (Scopus)

Abstract

In this study, we examined the effect of etching on the electrical properties, transmittance, and scattering of visible light in molybdenum doped zinc oxide, ZnO:Mo (MZO) thin films prepared by pulsed direct current magnetron sputtering. We used two different etching solutions - KOH and HCl - to alter the surface texture of the MZO thin film so that it could trap light. The experimental results showed that an MZO film with a minimum resistivity of about 8.9 × 10- 4 Ω cm and visible light transitivity of greater than 80% can be obtained without heating at a Mo content of 1.77 wt.%, sputtering power of 100 W, working pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm. To consider the effect of resistivity and optical diffuse transmittance, we performed etching of an 800 nm thick MZO thin film with 0.5 wt.% HCl for 3-6 s at 300 K. Consequently, we obtained a resistivity of 1.74-2.75 × 10- 3 Ω cm, total transmittance at visible light of 67%-73%, diffuse transmittance at visible light of 25.1%-28.4%, haze value of 0.34-0.42, and thin film surface crater diameters of 220-350 nm.

Original languageEnglish
Pages (from-to)5571-5576
Number of pages6
JournalThin Solid Films
Volume519
Issue number16
DOIs
Publication statusPublished - 2011 Jun 1

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Zinc Oxide
Molybdenum
Zinc oxide
zinc oxides
Magnetron sputtering
Oxide films
molybdenum
magnetron sputtering
solar cells
direct current
transmittance
Thin films
thin films
Etching
etching
electrical resistivity
haze
Opacity
Thick films
craters

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering",
abstract = "In this study, we examined the effect of etching on the electrical properties, transmittance, and scattering of visible light in molybdenum doped zinc oxide, ZnO:Mo (MZO) thin films prepared by pulsed direct current magnetron sputtering. We used two different etching solutions - KOH and HCl - to alter the surface texture of the MZO thin film so that it could trap light. The experimental results showed that an MZO film with a minimum resistivity of about 8.9 × 10- 4 Ω cm and visible light transitivity of greater than 80{\%} can be obtained without heating at a Mo content of 1.77 wt.{\%}, sputtering power of 100 W, working pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm. To consider the effect of resistivity and optical diffuse transmittance, we performed etching of an 800 nm thick MZO thin film with 0.5 wt.{\%} HCl for 3-6 s at 300 K. Consequently, we obtained a resistivity of 1.74-2.75 × 10- 3 Ω cm, total transmittance at visible light of 67{\%}-73{\%}, diffuse transmittance at visible light of 25.1{\%}-28.4{\%}, haze value of 0.34-0.42, and thin film surface crater diameters of 220-350 nm.",
author = "Lin, {Yi-Cheng or Y. C.} and Wang, {B. L.} and Yen, {W. T.} and Chih-Hsiung Shen",
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T1 - Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

AU - Lin, Yi-Cheng or Y. C.

AU - Wang, B. L.

AU - Yen, W. T.

AU - Shen, Chih-Hsiung

PY - 2011/6/1

Y1 - 2011/6/1

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AB - In this study, we examined the effect of etching on the electrical properties, transmittance, and scattering of visible light in molybdenum doped zinc oxide, ZnO:Mo (MZO) thin films prepared by pulsed direct current magnetron sputtering. We used two different etching solutions - KOH and HCl - to alter the surface texture of the MZO thin film so that it could trap light. The experimental results showed that an MZO film with a minimum resistivity of about 8.9 × 10- 4 Ω cm and visible light transitivity of greater than 80% can be obtained without heating at a Mo content of 1.77 wt.%, sputtering power of 100 W, working pressure of 0.4 Pa, pulsed frequency of 10 kHz, and film thickness of 500 nm. To consider the effect of resistivity and optical diffuse transmittance, we performed etching of an 800 nm thick MZO thin film with 0.5 wt.% HCl for 3-6 s at 300 K. Consequently, we obtained a resistivity of 1.74-2.75 × 10- 3 Ω cm, total transmittance at visible light of 67%-73%, diffuse transmittance at visible light of 25.1%-28.4%, haze value of 0.34-0.42, and thin film surface crater diameters of 220-350 nm.

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