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Surface properties of SiO
2
with and without H
2
O
2
treatment as gate dielectrics for pentacene thin-film transistor applications
Cheng Chun Hung,
Yow-Jon Lin
Graduate Institute of Photonics
Research output
:
Contribution to journal
›
Article
›
peer-review
4
Citations (Scopus)
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Chemical Compounds
pentacene
Gate dielectrics
Thin film transistors
Surface properties
Fermi level
Conduction bands
Carrier transport
Carrier mobility
Threshold voltage
Capacitance
Electric potential
Physics & Astronomy
surface properties
transistors
thin films
traps
shift
carrier mobility
threshold voltage
conduction bands
capacitance
electric potential