Abstract
The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.
| Original language | English |
|---|---|
| Pages (from-to) | 141-145 |
| Number of pages | 5 |
| Journal | Chemical Physics Letters |
| Volume | 691 |
| DOIs | |
| Publication status | Published - 2018 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
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Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications. / Hung, Cheng Chun; Lin, Yow-Jon.
In: Chemical Physics Letters, Vol. 691, 01.01.2018, p. 141-145.Research output: Contribution to journal › Article
TY - JOUR
T1 - Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications
AU - Hung, Cheng Chun
AU - Lin, Yow-Jon
PY - 2018/1/1
Y1 - 2018/1/1
N2 - The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.
AB - The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.
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U2 - 10.1016/j.cplett.2017.11.016
DO - 10.1016/j.cplett.2017.11.016
M3 - Article
AN - SCOPUS:85034097327
VL - 691
SP - 141
EP - 145
JO - Chemical Physics Letters
JF - Chemical Physics Letters
SN - 0009-2614
ER -