Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

Cheng Chun Hung, Yow-Jon Lin

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3 Citations (Scopus)

Abstract

The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

Original languageEnglish
Pages (from-to)141-145
Number of pages5
JournalChemical Physics Letters
Volume691
DOIs
Publication statusPublished - 2018 Jan 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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