Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

Cheng Chun Hung, Yow-Jon Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

Original languageEnglish
Pages (from-to)141-145
Number of pages5
JournalChemical Physics Letters
Volume691
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Gate dielectrics
Thin film transistors
surface properties
Surface properties
transistors
thin films
traps
Carrier transport
shift
Carrier mobility
carrier mobility
Fermi level
Conduction bands
Threshold voltage
threshold voltage
conduction bands
Capacitance
capacitance
pentacene
Electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

@article{193d3bc541e44d45b83facdf1cd3ac88,
title = "Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications",
abstract = "The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.",
author = "Hung, {Cheng Chun} and Yow-Jon Lin",
year = "2018",
month = "1",
day = "1",
doi = "10.1016/j.cplett.2017.11.016",
language = "English",
volume = "691",
pages = "141--145",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",

}

Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications. / Hung, Cheng Chun; Lin, Yow-Jon.

In: Chemical Physics Letters, Vol. 691, 01.01.2018, p. 141-145.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

AU - Hung, Cheng Chun

AU - Lin, Yow-Jon

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

AB - The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

UR - http://www.scopus.com/inward/record.url?scp=85034097327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85034097327&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2017.11.016

DO - 10.1016/j.cplett.2017.11.016

M3 - Article

VL - 691

SP - 141

EP - 145

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

ER -