Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Y. T. Cheng, Y. S. Huang, D. Y. Lin, F. H. Pollak, K. R. Evans

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Abstract

Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional profiles fabricated by molecular beam epitaxy. Signals have been observed from every region of the samples. The normalized first derivative of the surface photovoltage (SPV) signal with respect to photon energy from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The differences of intersubband transition energies are attributed to the surface segregation effects of indium atoms. In addition, other important parameters of the system such as the Al composition and the properties of the GaAs/GaAlAs superlattice (SL) buffer layer also are obtained from the SPV spectra. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature.

Original languageEnglish
Pages (from-to)313-322
Number of pages10
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume14
Issue number3
DOIs
Publication statusPublished - 2002 May 1

Fingerprint

photovoltages
High electron mobility transistors
high electron mobility transistors
Semiconductor quantum wells
quantum wells
Spectroscopy
profiles
Fermi level
spectroscopy
line shape
Derivatives
Surface segregation
Indium
Two dimensional electron gas
Buffer layers
Molecular beam epitaxy
shape functions
energy
room temperature
Photons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

@article{9d940ff68da94b6b9899b8d4c55a7f12,
title = "Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles",
abstract = "Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional profiles fabricated by molecular beam epitaxy. Signals have been observed from every region of the samples. The normalized first derivative of the surface photovoltage (SPV) signal with respect to photon energy from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The differences of intersubband transition energies are attributed to the surface segregation effects of indium atoms. In addition, other important parameters of the system such as the Al composition and the properties of the GaAs/GaAlAs superlattice (SL) buffer layer also are obtained from the SPV spectra. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature.",
author = "Cheng, {Y. T.} and Huang, {Y. S.} and Lin, {D. Y.} and Pollak, {F. H.} and Evans, {K. R.}",
year = "2002",
month = "5",
day = "1",
doi = "10.1016/S1386-9477(01)00233-8",
language = "English",
volume = "14",
pages = "313--322",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

AU - Cheng, Y. T.

AU - Huang, Y. S.

AU - Lin, D. Y.

AU - Pollak, F. H.

AU - Evans, K. R.

PY - 2002/5/1

Y1 - 2002/5/1

N2 - Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional profiles fabricated by molecular beam epitaxy. Signals have been observed from every region of the samples. The normalized first derivative of the surface photovoltage (SPV) signal with respect to photon energy from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The differences of intersubband transition energies are attributed to the surface segregation effects of indium atoms. In addition, other important parameters of the system such as the Al composition and the properties of the GaAs/GaAlAs superlattice (SL) buffer layer also are obtained from the SPV spectra. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature.

AB - Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional profiles fabricated by molecular beam epitaxy. Signals have been observed from every region of the samples. The normalized first derivative of the surface photovoltage (SPV) signal with respect to photon energy from the InGaAs quantum well channel can be accounted for by a line shape function which is the first derivative of a step-like two-dimensional density of states and a Fermi level filling factor. A detailed line shape fit makes it possible to evaluate the Fermi energy, and hence the concentration of two-dimensional electron gas in addition to the energies of the intersubband transitions. The differences of intersubband transition energies are attributed to the surface segregation effects of indium atoms. In addition, other important parameters of the system such as the Al composition and the properties of the GaAs/GaAlAs superlattice (SL) buffer layer also are obtained from the SPV spectra. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0036577971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036577971&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(01)00233-8

DO - 10.1016/S1386-9477(01)00233-8

M3 - Article

AN - SCOPUS:0036577971

VL - 14

SP - 313

EP - 322

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3

ER -