Surface photovoltage spectroscopy characterization of a GaAIAs/InGaAs/ GaAs pseudomorphic high electron mobility transistor structure

Y. T. Cheng, Y. S. Huang, D. Y. Lin, K. K. Tiong, Fred H. Pollak, K. R. Evans

Research output: Contribution to journalArticle

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Abstract

Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (Ns) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature.

Original languageEnglish
Pages (from-to)949-951
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number7
DOIs
Publication statusPublished - 2001 Aug 13

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photovoltages
high electron mobility transistors
spectroscopy
gas density
room temperature
electron gas
line shape
buffers
photons
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cheng, Y. T. ; Huang, Y. S. ; Lin, D. Y. ; Tiong, K. K. ; Pollak, Fred H. ; Evans, K. R. / Surface photovoltage spectroscopy characterization of a GaAIAs/InGaAs/ GaAs pseudomorphic high electron mobility transistor structure. In: Applied Physics Letters. 2001 ; Vol. 79, No. 7. pp. 949-951.
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abstract = "Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (Ns) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature.",
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Surface photovoltage spectroscopy characterization of a GaAIAs/InGaAs/ GaAs pseudomorphic high electron mobility transistor structure. / Cheng, Y. T.; Huang, Y. S.; Lin, D. Y.; Tiong, K. K.; Pollak, Fred H.; Evans, K. R.

In: Applied Physics Letters, Vol. 79, No. 7, 13.08.2001, p. 949-951.

Research output: Contribution to journalArticle

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AU - Cheng, Y. T.

AU - Huang, Y. S.

AU - Lin, D. Y.

AU - Tiong, K. K.

AU - Pollak, Fred H.

AU - Evans, K. R.

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AB - Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (Ns) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature.

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