Surface morphology measurement and investigation of a new CMOS compatible thermopile with high fill factor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new CMOS compatible thermopile was designed and fabricated with high fill factor, the floating membrane of the thermopile which we designed was formed by T-shape anisotropic etching window that never be proposed before. The design and fabrication of thermopile sensors are realized by using 1.2 μm CMOSIC technology combined with a subsequent anisotropic frontside etching. Four etching windows with minimum T-shape were opened by the CMOS processes, and then by using N2H4 etching solution the silicon substrate was etched along <100> directions. The T-shape etching windows which proposed in this paper are designed at four quadrant of membrane to form the extended undercut etching area of opened windows of overlap. The floating membrane has a larger area of 1100×1100μm2 and 2 μm thick. Therefore, the area of proposed membrane Ls increased greatly which absorbs more infrared radiation than the conventional design and enhances responsivity very well. A surface morphology measurement of thermopile is implemented to evaluate the influence of residual stress and characterize geometric shape of membrane practically. More careful analysis of surface morphology show the bending of suspension parts has a deviation of responsivity less than 0.167%. For our work, the T-shape structure of thermopile with large absorption area and high performance by using CMOS compatible process is proven to be very successful and easy fabricated.

Original languageEnglish
Title of host publicationIMTC'06 - Proceedings of the IEEE Instrumentation and Measurement Technology Conference
Pages2032-2037
Number of pages6
DOIs
Publication statusPublished - 2006 Dec 1
EventIMTC'06 - IEEE Instrumentation and Measurement Technology Conference - Sorrento, Italy
Duration: 2006 Apr 242006 Apr 27

Other

OtherIMTC'06 - IEEE Instrumentation and Measurement Technology Conference
CountryItaly
CitySorrento
Period06-04-2406-04-27

Fingerprint

Thermopiles
Surface morphology
Etching
Membranes
Anisotropic etching
Residual stresses
Infrared radiation
Fabrication
Silicon
Sensors
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chen, S. J., & Shen, C-H. (2006). Surface morphology measurement and investigation of a new CMOS compatible thermopile with high fill factor. In IMTC'06 - Proceedings of the IEEE Instrumentation and Measurement Technology Conference (pp. 2032-2037). [1700550] https://doi.org/10.1109/IMTC.2006.236404
Chen, Shu Jung ; Shen, Chih-Hsiung. / Surface morphology measurement and investigation of a new CMOS compatible thermopile with high fill factor. IMTC'06 - Proceedings of the IEEE Instrumentation and Measurement Technology Conference. 2006. pp. 2032-2037
@inproceedings{c4c9b6835c874c70bdff893b0d378c45,
title = "Surface morphology measurement and investigation of a new CMOS compatible thermopile with high fill factor",
abstract = "A new CMOS compatible thermopile was designed and fabricated with high fill factor, the floating membrane of the thermopile which we designed was formed by T-shape anisotropic etching window that never be proposed before. The design and fabrication of thermopile sensors are realized by using 1.2 μm CMOSIC technology combined with a subsequent anisotropic frontside etching. Four etching windows with minimum T-shape were opened by the CMOS processes, and then by using N2H4 etching solution the silicon substrate was etched along <100> directions. The T-shape etching windows which proposed in this paper are designed at four quadrant of membrane to form the extended undercut etching area of opened windows of overlap. The floating membrane has a larger area of 1100×1100μm2 and 2 μm thick. Therefore, the area of proposed membrane Ls increased greatly which absorbs more infrared radiation than the conventional design and enhances responsivity very well. A surface morphology measurement of thermopile is implemented to evaluate the influence of residual stress and characterize geometric shape of membrane practically. More careful analysis of surface morphology show the bending of suspension parts has a deviation of responsivity less than 0.167{\%}. For our work, the T-shape structure of thermopile with large absorption area and high performance by using CMOS compatible process is proven to be very successful and easy fabricated.",
author = "Chen, {Shu Jung} and Chih-Hsiung Shen",
year = "2006",
month = "12",
day = "1",
doi = "10.1109/IMTC.2006.236404",
language = "English",
isbn = "0780393600",
pages = "2032--2037",
booktitle = "IMTC'06 - Proceedings of the IEEE Instrumentation and Measurement Technology Conference",

}

Chen, SJ & Shen, C-H 2006, Surface morphology measurement and investigation of a new CMOS compatible thermopile with high fill factor. in IMTC'06 - Proceedings of the IEEE Instrumentation and Measurement Technology Conference., 1700550, pp. 2032-2037, IMTC'06 - IEEE Instrumentation and Measurement Technology Conference, Sorrento, Italy, 06-04-24. https://doi.org/10.1109/IMTC.2006.236404

Surface morphology measurement and investigation of a new CMOS compatible thermopile with high fill factor. / Chen, Shu Jung; Shen, Chih-Hsiung.

IMTC'06 - Proceedings of the IEEE Instrumentation and Measurement Technology Conference. 2006. p. 2032-2037 1700550.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Surface morphology measurement and investigation of a new CMOS compatible thermopile with high fill factor

AU - Chen, Shu Jung

AU - Shen, Chih-Hsiung

PY - 2006/12/1

Y1 - 2006/12/1

N2 - A new CMOS compatible thermopile was designed and fabricated with high fill factor, the floating membrane of the thermopile which we designed was formed by T-shape anisotropic etching window that never be proposed before. The design and fabrication of thermopile sensors are realized by using 1.2 μm CMOSIC technology combined with a subsequent anisotropic frontside etching. Four etching windows with minimum T-shape were opened by the CMOS processes, and then by using N2H4 etching solution the silicon substrate was etched along <100> directions. The T-shape etching windows which proposed in this paper are designed at four quadrant of membrane to form the extended undercut etching area of opened windows of overlap. The floating membrane has a larger area of 1100×1100μm2 and 2 μm thick. Therefore, the area of proposed membrane Ls increased greatly which absorbs more infrared radiation than the conventional design and enhances responsivity very well. A surface morphology measurement of thermopile is implemented to evaluate the influence of residual stress and characterize geometric shape of membrane practically. More careful analysis of surface morphology show the bending of suspension parts has a deviation of responsivity less than 0.167%. For our work, the T-shape structure of thermopile with large absorption area and high performance by using CMOS compatible process is proven to be very successful and easy fabricated.

AB - A new CMOS compatible thermopile was designed and fabricated with high fill factor, the floating membrane of the thermopile which we designed was formed by T-shape anisotropic etching window that never be proposed before. The design and fabrication of thermopile sensors are realized by using 1.2 μm CMOSIC technology combined with a subsequent anisotropic frontside etching. Four etching windows with minimum T-shape were opened by the CMOS processes, and then by using N2H4 etching solution the silicon substrate was etched along <100> directions. The T-shape etching windows which proposed in this paper are designed at four quadrant of membrane to form the extended undercut etching area of opened windows of overlap. The floating membrane has a larger area of 1100×1100μm2 and 2 μm thick. Therefore, the area of proposed membrane Ls increased greatly which absorbs more infrared radiation than the conventional design and enhances responsivity very well. A surface morphology measurement of thermopile is implemented to evaluate the influence of residual stress and characterize geometric shape of membrane practically. More careful analysis of surface morphology show the bending of suspension parts has a deviation of responsivity less than 0.167%. For our work, the T-shape structure of thermopile with large absorption area and high performance by using CMOS compatible process is proven to be very successful and easy fabricated.

UR - http://www.scopus.com/inward/record.url?scp=34547917708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547917708&partnerID=8YFLogxK

U2 - 10.1109/IMTC.2006.236404

DO - 10.1109/IMTC.2006.236404

M3 - Conference contribution

AN - SCOPUS:34547917708

SN - 0780393600

SN - 9780780393608

SP - 2032

EP - 2037

BT - IMTC'06 - Proceedings of the IEEE Instrumentation and Measurement Technology Conference

ER -

Chen SJ, Shen C-H. Surface morphology measurement and investigation of a new CMOS compatible thermopile with high fill factor. In IMTC'06 - Proceedings of the IEEE Instrumentation and Measurement Technology Conference. 2006. p. 2032-2037. 1700550 https://doi.org/10.1109/IMTC.2006.236404