Surface evolution in a pulsed laser induced epitaxy process of submicron SiGe wires

C. Deng, T. W. Sigmon, Jong-Ching Wu, M. N. Wybourne

Research output: Contribution to journalArticle

Abstract

(100) Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Pulsed laser induced epitaxy (PLIE) is used in an attempt to fabricate ultrasmall dimension Ge1-xSix wires. After laser irradiation, interesting changes on the surface are observed. In particular, ripples as high as ∼30 nm are formed after the 6 nm Ge wires are incorporated into the substrate. The ripples decrease in height with further laser irradiation. The height is a function of the Ge wire width. Nomarski, scanning electron, atomic force, and cross-sectional transmission electron microscopy are used in the analysis. Possible explanations for the growth of the features are discussed.

Original languageEnglish
Pages (from-to)2678-2680
Number of pages3
JournalJournal of the Electrochemical Society
Volume143
Issue number8
DOIs
Publication statusPublished - 1996 Jan 1

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Pulsed lasers
Epitaxial growth
Wire
Laser beam effects
Substrates
Transmission electron microscopy
Scanning
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

@article{3cdf703460e940b58663d2feb9c20582,
title = "Surface evolution in a pulsed laser induced epitaxy process of submicron SiGe wires",
abstract = "(100) Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Pulsed laser induced epitaxy (PLIE) is used in an attempt to fabricate ultrasmall dimension Ge1-xSix wires. After laser irradiation, interesting changes on the surface are observed. In particular, ripples as high as ∼30 nm are formed after the 6 nm Ge wires are incorporated into the substrate. The ripples decrease in height with further laser irradiation. The height is a function of the Ge wire width. Nomarski, scanning electron, atomic force, and cross-sectional transmission electron microscopy are used in the analysis. Possible explanations for the growth of the features are discussed.",
author = "C. Deng and Sigmon, {T. W.} and Jong-Ching Wu and Wybourne, {M. N.}",
year = "1996",
month = "1",
day = "1",
doi = "10.1149/1.1837069",
language = "English",
volume = "143",
pages = "2678--2680",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

Surface evolution in a pulsed laser induced epitaxy process of submicron SiGe wires. / Deng, C.; Sigmon, T. W.; Wu, Jong-Ching; Wybourne, M. N.

In: Journal of the Electrochemical Society, Vol. 143, No. 8, 01.01.1996, p. 2678-2680.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Surface evolution in a pulsed laser induced epitaxy process of submicron SiGe wires

AU - Deng, C.

AU - Sigmon, T. W.

AU - Wu, Jong-Ching

AU - Wybourne, M. N.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - (100) Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Pulsed laser induced epitaxy (PLIE) is used in an attempt to fabricate ultrasmall dimension Ge1-xSix wires. After laser irradiation, interesting changes on the surface are observed. In particular, ripples as high as ∼30 nm are formed after the 6 nm Ge wires are incorporated into the substrate. The ripples decrease in height with further laser irradiation. The height is a function of the Ge wire width. Nomarski, scanning electron, atomic force, and cross-sectional transmission electron microscopy are used in the analysis. Possible explanations for the growth of the features are discussed.

AB - (100) Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Pulsed laser induced epitaxy (PLIE) is used in an attempt to fabricate ultrasmall dimension Ge1-xSix wires. After laser irradiation, interesting changes on the surface are observed. In particular, ripples as high as ∼30 nm are formed after the 6 nm Ge wires are incorporated into the substrate. The ripples decrease in height with further laser irradiation. The height is a function of the Ge wire width. Nomarski, scanning electron, atomic force, and cross-sectional transmission electron microscopy are used in the analysis. Possible explanations for the growth of the features are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0030212086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030212086&partnerID=8YFLogxK

U2 - 10.1149/1.1837069

DO - 10.1149/1.1837069

M3 - Article

AN - SCOPUS:0030212086

VL - 143

SP - 2678

EP - 2680

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -