Surface evolution in a pulsed laser induced epitaxy process of submicron SiGe wires

C. Deng, T. W. Sigmon, J. C. Wu, M. N. Wybourne

Research output: Contribution to journalArticle

Abstract

(100) Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Pulsed laser induced epitaxy (PLIE) is used in an attempt to fabricate ultrasmall dimension Ge1-xSix wires. After laser irradiation, interesting changes on the surface are observed. In particular, ripples as high as ∼30 nm are formed after the 6 nm Ge wires are incorporated into the substrate. The ripples decrease in height with further laser irradiation. The height is a function of the Ge wire width. Nomarski, scanning electron, atomic force, and cross-sectional transmission electron microscopy are used in the analysis. Possible explanations for the growth of the features are discussed.

Original languageEnglish
Pages (from-to)2678-2680
Number of pages3
JournalJournal of the Electrochemical Society
Volume143
Issue number8
DOIs
Publication statusPublished - 1996 Aug

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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