Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN

Yow Jon Lin, Zhi Long Wang, Hsing Cheng Chang

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Abstract

The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

Original languageEnglish
Pages (from-to)5183-5185
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number27
DOIs
Publication statusPublished - 2002 Dec 30

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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