Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN

Yow Jon Lin, Zhi Long Wang, Hsing Cheng Chang

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

Original languageEnglish
Pages (from-to)5183-5185
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number27
DOIs
Publication statusPublished - 2002 Dec 30

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photoluminescence
nitrogen
defects
photoelectron spectroscopy
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN",
abstract = "The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.",
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Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN. / Lin, Yow Jon; Wang, Zhi Long; Chang, Hsing Cheng.

In: Applied Physics Letters, Vol. 81, No. 27, 30.12.2002, p. 5183-5185.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN

AU - Lin, Yow Jon

AU - Wang, Zhi Long

AU - Chang, Hsing Cheng

PY - 2002/12/30

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N2 - The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

AB - The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

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