Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN

Yow Jon Lin; Zhi Long Wang; Hsing Cheng Chang

doi:10.1063/1.1533857

Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH₄)₂S_x-treated p-GaN

Yow Jon Lin, Zhi Long Wang, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The effects of (NH₄)₂S_x treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

Original language	English
Pages (from-to)	5183-5185
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	27
DOIs	https://doi.org/10.1063/1.1533857
Publication status	Published - 2002 Dec 30

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1533857

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abstract = "The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.",

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AU - Wang, Zhi Long

AU - Chang, Hsing Cheng

PY - 2002/12/30

Y1 - 2002/12/30

N2 - The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

AB - The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

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