Abstract
The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 5183-5185 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - 2002 Dec 30 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH<sub>4</sub>)<sub>2</sub>S<sub>x</sub>-treated p-GaN'. Together they form a unique fingerprint.
Cite this
Lin, Y. J., Wang, Z. L., & Chang, H. C. (2002). Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN. Applied Physics Letters, 81(27), 5183-5185. https://doi.org/10.1063/1.1533857