Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN

Yow Jon Lin; Zhi Long Wang; Hsing Cheng Chang

doi:10.1063/1.1533857

Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH₄)₂S_x-treated p-GaN

Yow Jon Lin, Zhi Long Wang, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

The effects of (NH₄)₂S_x treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

Original language	English
Pages (from-to)	5183-5185
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	27
DOIs	https://doi.org/10.1063/1.1533857
Publication status	Published - 2002 Dec 30

Fingerprint

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Lin, Y. J., Wang, Z. L., & Chang, H. C. (2002). Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH₄)₂S_x-treated p-GaN. Applied Physics Letters, 81(27), 5183-5185. https://doi.org/10.1063/1.1533857

@article{23f1db253d8740ca98373ed4811b6c12,

title = "Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN",

abstract = "The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.",

author = "Lin, {Yow Jon} and Wang, {Zhi Long} and Chang, {Hsing Cheng}",

year = "2002",

month = "12",

day = "30",

doi = "10.1063/1.1533857",

language = "English",

volume = "81",

pages = "5183--5185",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "27",

}

TY - JOUR

T1 - Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN

AU - Lin, Yow Jon

AU - Wang, Zhi Long

AU - Chang, Hsing Cheng

PY - 2002/12/30

Y1 - 2002/12/30

N2 - The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

AB - The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

UR - http://www.scopus.com/inward/record.url?scp=0347997276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347997276&partnerID=8YFLogxK

U2 - 10.1063/1.1533857

DO - 10.1063/1.1533857

M3 - Article

AN - SCOPUS:0347997276

VL - 81

SP - 5183

EP - 5185

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 27

ER -

Access to Document

10.1063/1.1533857