Abstract
The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 5183-5185 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - 2002 Dec 30 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN. / Lin, Yow Jon; Wang, Zhi Long; Chang, Hsing Cheng.
In: Applied Physics Letters, Vol. 81, No. 27, 30.12.2002, p. 5183-5185.Research output: Contribution to journal › Article
TY - JOUR
T1 - Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN
AU - Lin, Yow Jon
AU - Wang, Zhi Long
AU - Chang, Hsing Cheng
PY - 2002/12/30
Y1 - 2002/12/30
N2 - The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.
AB - The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.
UR - http://www.scopus.com/inward/record.url?scp=0347997276&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0347997276&partnerID=8YFLogxK
U2 - 10.1063/1.1533857
DO - 10.1063/1.1533857
M3 - Article
AN - SCOPUS:0347997276
VL - 81
SP - 5183
EP - 5185
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 27
ER -