Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy

Yow-Jon Lin, Ching Ting Lee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.

Original languageEnglish
Pages (from-to)1734-1738
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number5
DOIs
Publication statusPublished - 2001 Sep 1

Fingerprint

Gallium nitride
gallium nitrides
Surface analysis
Photoelectron spectroscopy
Indium
x ray spectroscopy
indium
photoelectron spectroscopy
X rays
Organic chemicals
Epitaxial layers
Binding energy
Passivation
Sapphire
Chemical vapor deposition
passivity
metalorganic chemical vapor deposition
sapphire
binding energy
Substrates

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.",
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Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy. / Lin, Yow-Jon; Lee, Ching Ting.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 5, 01.09.2001, p. 1734-1738.

Research output: Contribution to journalArticle

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AB - The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.

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