The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2001 Sep 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering