Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy

Yow-Jon Lin; Ching Ting Lee

doi:10.1116/1.1395618

Surface analysis of (NH₄)₂S_x-treated InGaN using x-ray photoelectron spectroscopy

Yow-Jon Lin, Ching Ting Lee

Graduate Institute of Photonics

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14 Citations (Scopus)

Abstract

The surface analysis of (NH₄)₂S_x treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaS_x and InS_y surface passivation species on the InGaN surface were also found.

Original language	English
Pages (from-to)	1734-1738
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	5
DOIs	https://doi.org/10.1116/1.1395618
Publication status	Published - 2001 Sep 1

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All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Lin, Y-J., & Lee, C. T. (2001). Surface analysis of (NH₄)₂S_x-treated InGaN using x-ray photoelectron spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(5), 1734-1738. https://doi.org/10.1116/1.1395618

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10.1116/1.1395618