Abstract
The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.
| Original language | English |
|---|---|
| Pages (from-to) | 1734-1738 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 19 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2001 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy. / Lin, Yow-Jon; Lee, Ching Ting.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 5, 01.09.2001, p. 1734-1738.Research output: Contribution to journal › Article
TY - JOUR
T1 - Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy
AU - Lin, Yow-Jon
AU - Lee, Ching Ting
PY - 2001/9/1
Y1 - 2001/9/1
N2 - The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.
AB - The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.
UR - http://www.scopus.com/inward/record.url?scp=0035440462&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035440462&partnerID=8YFLogxK
U2 - 10.1116/1.1395618
DO - 10.1116/1.1395618
M3 - Article
AN - SCOPUS:0035440462
VL - 19
SP - 1734
EP - 1738
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 5
ER -