Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy

Yow-Jon Lin; Ching Ting Lee

doi:10.1116/1.1395618

Surface analysis of (NH₄)₂S_x-treated InGaN using x-ray photoelectron spectroscopy

Yow-Jon Lin, Ching Ting Lee

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The surface analysis of (NH₄)₂S_x treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaS_x and InS_y surface passivation species on the InGaN surface were also found.

Original language	English
Pages (from-to)	1734-1738
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	5
DOIs	https://doi.org/10.1116/1.1395618
Publication status	Published - 2001 Sep 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.",

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AU - Lee, Ching Ting

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N2 - The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.

AB - The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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