Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition

T. S. Ko, T. C. Wang, R. C. Gao, H. G. Chen, G. S. Huang, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Non-polar a-plane (1 1 over(2, -) 0) GaN thin films were grown on r-plane (1 over(1, -) 0 2) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 Å. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer.

Original languageEnglish
Pages (from-to)308-313
Number of pages6
JournalJournal of Crystal Growth
Volume300
Issue number2
DOIs
Publication statusPublished - 2007 Mar 15

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Organic Chemicals
Aluminum Oxide
Organic chemicals
Sapphire
metalorganic chemical vapor deposition
Surface morphology
Chemical vapor deposition
sapphire
Metals
Nucleation
Surface roughness
Thin films
Crystals
roughness
low pressure
nucleation
Substrates
thin films
crystals
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Ko, T. S. ; Wang, T. C. ; Gao, R. C. ; Chen, H. G. ; Huang, G. S. ; Lu, T. C. ; Kuo, H. C. ; Wang, S. C. / Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition. In: Journal of Crystal Growth. 2007 ; Vol. 300, No. 2. pp. 308-313.
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abstract = "Non-polar a-plane (1 1 over(2, -) 0) GaN thin films were grown on r-plane (1 over(1, -) 0 2) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 {\AA}. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer.",
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Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition. / Ko, T. S.; Wang, T. C.; Gao, R. C.; Chen, H. G.; Huang, G. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

In: Journal of Crystal Growth, Vol. 300, No. 2, 15.03.2007, p. 308-313.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition

AU - Ko, T. S.

AU - Wang, T. C.

AU - Gao, R. C.

AU - Chen, H. G.

AU - Huang, G. S.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

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AB - Non-polar a-plane (1 1 over(2, -) 0) GaN thin films were grown on r-plane (1 over(1, -) 0 2) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 Å. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer.

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