Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition

T. S. Ko, T. C. Wang, R. C. Gao, H. G. Chen, G. S. Huang, T. C. Lu, H. C. Kuo, S. C. Wang

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Non-polar a-plane (1 1 over(2, -) 0) GaN thin films were grown on r-plane (1 over(1, -) 0 2) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 Å. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer.

Original languageEnglish
Pages (from-to)308-313
Number of pages6
JournalJournal of Crystal Growth
Issue number2
Publication statusPublished - 2007 Mar 15


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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