Study of TiWN Schottky contacts on n-Ga0.51In0.49P

Edward Y. Chang, Yeong Lin Lai, Kuen Chyuan Lin, Chun Yen Chang, F. Y. Juang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The first study of the TiW nitrides (TiWNX) as the Schottky contact metals to the n type Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. The RF-magnetron sputtering system was utilized for the nitride deposition. The thermal stability of the nitride films were studied using rapid thermal annealing (RTA) method. Both the electrical characteristics and the materials characteristics were investigated. The materials properties of the nitride films were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). The TiWNX Schottky contacts demonstrate excellent electrical and physical characteristics, even after high temperature annealing. The barrier heights range from 0.81 to 1.05 eV depending on the content of the nitrogen and the annealing conditions. The XRD and AES results show no indication of interaction at the TiWNX/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the contact were attributed to the high bandgap nature of the Ga0.51In0.49P and the incorporation of nitrogen into the TiW films.

Original languageEnglish
Title of host publicationIII-V Electronic and Photonic Device Fabrication and Performance
EditorsK.S. Jones, S.J. Pearton, H. Kanber
PublisherPubl by Materials Research Society
Pages279-284
Number of pages6
ISBN (Print)1558991964
Publication statusPublished - 1993 Dec 1
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 15

Publication series

NameMaterials Research Society Symposium Proceedings
Volume300
ISSN (Print)0272-9172

Other

OtherMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA
Period93-04-1293-04-15

Fingerprint

Nitrides
nitrides
electric contacts
Auger electron spectroscopy
Auger spectroscopy
annealing
electron spectroscopy
Nitrogen
Annealing
nitrogen
X ray diffraction
Rapid thermal annealing
Epitaxial layers
Metallorganic chemical vapor deposition
diffraction
Magnetron sputtering
metalorganic chemical vapor deposition
Heterojunctions
Materials properties
magnetron sputtering

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chang, E. Y., Lai, Y. L., Lin, K. C., Chang, C. Y., & Juang, F. Y. (1993). Study of TiWN Schottky contacts on n-Ga0.51In0.49P. In K. S. Jones, S. J. Pearton, & H. Kanber (Eds.), III-V Electronic and Photonic Device Fabrication and Performance (pp. 279-284). (Materials Research Society Symposium Proceedings; Vol. 300). Publ by Materials Research Society.
Chang, Edward Y. ; Lai, Yeong Lin ; Lin, Kuen Chyuan ; Chang, Chun Yen ; Juang, F. Y. / Study of TiWN Schottky contacts on n-Ga0.51In0.49P. III-V Electronic and Photonic Device Fabrication and Performance. editor / K.S. Jones ; S.J. Pearton ; H. Kanber. Publ by Materials Research Society, 1993. pp. 279-284 (Materials Research Society Symposium Proceedings).
@inproceedings{72591aa2f5874e59957322b230823b2c,
title = "Study of TiWN Schottky contacts on n-Ga0.51In0.49P",
abstract = "The first study of the TiW nitrides (TiWNX) as the Schottky contact metals to the n type Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. The RF-magnetron sputtering system was utilized for the nitride deposition. The thermal stability of the nitride films were studied using rapid thermal annealing (RTA) method. Both the electrical characteristics and the materials characteristics were investigated. The materials properties of the nitride films were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). The TiWNX Schottky contacts demonstrate excellent electrical and physical characteristics, even after high temperature annealing. The barrier heights range from 0.81 to 1.05 eV depending on the content of the nitrogen and the annealing conditions. The XRD and AES results show no indication of interaction at the TiWNX/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the contact were attributed to the high bandgap nature of the Ga0.51In0.49P and the incorporation of nitrogen into the TiW films.",
author = "Chang, {Edward Y.} and Lai, {Yeong Lin} and Lin, {Kuen Chyuan} and Chang, {Chun Yen} and Juang, {F. Y.}",
year = "1993",
month = "12",
day = "1",
language = "English",
isbn = "1558991964",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "279--284",
editor = "K.S. Jones and S.J. Pearton and H. Kanber",
booktitle = "III-V Electronic and Photonic Device Fabrication and Performance",

}

Chang, EY, Lai, YL, Lin, KC, Chang, CY & Juang, FY 1993, Study of TiWN Schottky contacts on n-Ga0.51In0.49P. in KS Jones, SJ Pearton & H Kanber (eds), III-V Electronic and Photonic Device Fabrication and Performance. Materials Research Society Symposium Proceedings, vol. 300, Publ by Materials Research Society, pp. 279-284, Materials Research Society Spring Meeting, San Francisco, CA, USA, 93-04-12.

Study of TiWN Schottky contacts on n-Ga0.51In0.49P. / Chang, Edward Y.; Lai, Yeong Lin; Lin, Kuen Chyuan; Chang, Chun Yen; Juang, F. Y.

III-V Electronic and Photonic Device Fabrication and Performance. ed. / K.S. Jones; S.J. Pearton; H. Kanber. Publ by Materials Research Society, 1993. p. 279-284 (Materials Research Society Symposium Proceedings; Vol. 300).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Study of TiWN Schottky contacts on n-Ga0.51In0.49P

AU - Chang, Edward Y.

AU - Lai, Yeong Lin

AU - Lin, Kuen Chyuan

AU - Chang, Chun Yen

AU - Juang, F. Y.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The first study of the TiW nitrides (TiWNX) as the Schottky contact metals to the n type Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. The RF-magnetron sputtering system was utilized for the nitride deposition. The thermal stability of the nitride films were studied using rapid thermal annealing (RTA) method. Both the electrical characteristics and the materials characteristics were investigated. The materials properties of the nitride films were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). The TiWNX Schottky contacts demonstrate excellent electrical and physical characteristics, even after high temperature annealing. The barrier heights range from 0.81 to 1.05 eV depending on the content of the nitrogen and the annealing conditions. The XRD and AES results show no indication of interaction at the TiWNX/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the contact were attributed to the high bandgap nature of the Ga0.51In0.49P and the incorporation of nitrogen into the TiW films.

AB - The first study of the TiW nitrides (TiWNX) as the Schottky contact metals to the n type Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. The RF-magnetron sputtering system was utilized for the nitride deposition. The thermal stability of the nitride films were studied using rapid thermal annealing (RTA) method. Both the electrical characteristics and the materials characteristics were investigated. The materials properties of the nitride films were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). The TiWNX Schottky contacts demonstrate excellent electrical and physical characteristics, even after high temperature annealing. The barrier heights range from 0.81 to 1.05 eV depending on the content of the nitrogen and the annealing conditions. The XRD and AES results show no indication of interaction at the TiWNX/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the contact were attributed to the high bandgap nature of the Ga0.51In0.49P and the incorporation of nitrogen into the TiW films.

UR - http://www.scopus.com/inward/record.url?scp=0027800356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027800356&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027800356

SN - 1558991964

T3 - Materials Research Society Symposium Proceedings

SP - 279

EP - 284

BT - III-V Electronic and Photonic Device Fabrication and Performance

A2 - Jones, K.S.

A2 - Pearton, S.J.

A2 - Kanber, H.

PB - Publ by Materials Research Society

ER -

Chang EY, Lai YL, Lin KC, Chang CY, Juang FY. Study of TiWN Schottky contacts on n-Ga0.51In0.49P. In Jones KS, Pearton SJ, Kanber H, editors, III-V Electronic and Photonic Device Fabrication and Performance. Publ by Materials Research Society. 1993. p. 279-284. (Materials Research Society Symposium Proceedings).