Study of TiWN Schottky contacts on n-Ga0.51In0.49P

Edward Y. Chang, Yeong Lin Lai, Kuen Chyuan Lin, Chun Yen Chang, F. Y. Juang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The first study of the TiW nitrides (TiWNX) as the Schottky contact metals to the n type Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. The RF-magnetron sputtering system was utilized for the nitride deposition. The thermal stability of the nitride films were studied using rapid thermal annealing (RTA) method. Both the electrical characteristics and the materials characteristics were investigated. The materials properties of the nitride films were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). The TiWNX Schottky contacts demonstrate excellent electrical and physical characteristics, even after high temperature annealing. The barrier heights range from 0.81 to 1.05 eV depending on the content of the nitrogen and the annealing conditions. The XRD and AES results show no indication of interaction at the TiWNX/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the contact were attributed to the high bandgap nature of the Ga0.51In0.49P and the incorporation of nitrogen into the TiW films.

Original languageEnglish
Title of host publicationIII-V Electronic and Photonic Device Fabrication and Performance
EditorsK.S. Jones, S.J. Pearton, H. Kanber
PublisherPubl by Materials Research Society
Pages279-284
Number of pages6
ISBN (Print)1558991964
Publication statusPublished - 1993 Dec 1
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 15

Publication series

NameMaterials Research Society Symposium Proceedings
Volume300
ISSN (Print)0272-9172

Other

OtherMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA
Period93-04-1293-04-15

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chang, E. Y., Lai, Y. L., Lin, K. C., Chang, C. Y., & Juang, F. Y. (1993). Study of TiWN Schottky contacts on n-Ga0.51In0.49P. In K. S. Jones, S. J. Pearton, & H. Kanber (Eds.), III-V Electronic and Photonic Device Fabrication and Performance (pp. 279-284). (Materials Research Society Symposium Proceedings; Vol. 300). Publ by Materials Research Society.