Study of the thermal stability of the Schottky contacts of GaInP grown by LP-MOCVD

Edward Y. Chang, Yeong Lin Lai, Kuen Chyuan Lin, Chun Yen Chang, F. Y. Juang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Thermal stability of the Schottky contacts on Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. In this paper, materials aspects of the Ga0.51In0.49P layers were characterized and thermal stability of three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi2, W5Si3, PtSi, and Pt2Si), and TiW nitrides (TiWNX) as the Schottky contacts materials on Ga0.51In0.49P were studied. Due to the high bandgap nature of Ga0.51In0.49P, the Schottky contacts on Ga0.51In0.49P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the materials and the annealing conditions. For single-metal contacts, Pt film shows the best thermal stability, the barrier height of 1.09 eV and the ideality factor of 1.06 were obtained for the Pt Schottky diode with furnace annealing at 500 °C for 30 min. For refractory compound films, the TiWNX film shows the best thermal stability. The TiWNX Schottky contacts demonstrate excellent electrical as well as physical characteristics, even after high temperature annealing at 850 °C.

Original languageEnglish
Title of host publicationChemical Perspectives of Microelectronic Materials III
PublisherPubl by Materials Research Society
Pages253-258
Number of pages6
ISBN (Print)1558991778
Publication statusPublished - 1993 Jan 1
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: 1992 Nov 301992 Dec 3

Publication series

NameMaterials Research Society Symposium Proceedings
Volume282
ISSN (Print)0272-9172

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period92-11-3092-12-03

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chang, E. Y., Lai, Y. L., Lin, K. C., Chang, C. Y., & Juang, F. Y. (1993). Study of the thermal stability of the Schottky contacts of GaInP grown by LP-MOCVD. In Chemical Perspectives of Microelectronic Materials III (pp. 253-258). (Materials Research Society Symposium Proceedings; Vol. 282). Publ by Materials Research Society.