Abstract
Thermal stability of the Schottky contacts on Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. In this paper, materials aspects of the Ga0.51In0.49P layers were characterized and thermal stability of three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi2, W5Si3, PtSi, and Pt2Si), and TiW nitrides (TiWNX) as the Schottky contacts materials on Ga0.51In0.49P were studied. Due to the high bandgap nature of Ga0.51In0.49P, the Schottky contacts on Ga0.51In0.49P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the materials and the annealing conditions. For single-metal contacts, Pt film shows the best thermal stability, the barrier height of 1.09 eV and the ideality factor of 1.06 were obtained for the Pt Schottky diode with furnace annealing at 500 °C for 30 min. For refractory compound films, the TiWNX film shows the best thermal stability. The TiWNX Schottky contacts demonstrate excellent electrical as well as physical characteristics, even after high temperature annealing at 850 °C.
| Original language | English |
|---|---|
| Title of host publication | Chemical Perspectives of Microelectronic Materials III |
| Publisher | Publ by Materials Research Society |
| Pages | 253-258 |
| Number of pages | 6 |
| ISBN (Print) | 1558991778 |
| Publication status | Published - 1993 Jan 1 |
| Event | Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA Duration: 1992 Nov 30 → 1992 Dec 3 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 282 |
| ISSN (Print) | 0272-9172 |
Other
| Other | Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials |
|---|---|
| City | Boston, MA, USA |
| Period | 92-11-30 → 92-12-03 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Study of the thermal stability of the Schottky contacts of GaInP grown by LP-MOCVD. / Chang, Edward Y.; Lai, Yeong Lin; Lin, Kuen Chyuan; Chang, Chun Yen; Juang, F. Y.
Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society, 1993. p. 253-258 (Materials Research Society Symposium Proceedings; Vol. 282).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Study of the thermal stability of the Schottky contacts of GaInP grown by LP-MOCVD
AU - Chang, Edward Y.
AU - Lai, Yeong Lin
AU - Lin, Kuen Chyuan
AU - Chang, Chun Yen
AU - Juang, F. Y.
PY - 1993/1/1
Y1 - 1993/1/1
N2 - Thermal stability of the Schottky contacts on Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. In this paper, materials aspects of the Ga0.51In0.49P layers were characterized and thermal stability of three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi2, W5Si3, PtSi, and Pt2Si), and TiW nitrides (TiWNX) as the Schottky contacts materials on Ga0.51In0.49P were studied. Due to the high bandgap nature of Ga0.51In0.49P, the Schottky contacts on Ga0.51In0.49P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the materials and the annealing conditions. For single-metal contacts, Pt film shows the best thermal stability, the barrier height of 1.09 eV and the ideality factor of 1.06 were obtained for the Pt Schottky diode with furnace annealing at 500 °C for 30 min. For refractory compound films, the TiWNX film shows the best thermal stability. The TiWNX Schottky contacts demonstrate excellent electrical as well as physical characteristics, even after high temperature annealing at 850 °C.
AB - Thermal stability of the Schottky contacts on Ga0.51In0.49P has been made. The Ga0.51In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. In this paper, materials aspects of the Ga0.51In0.49P layers were characterized and thermal stability of three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi2, W5Si3, PtSi, and Pt2Si), and TiW nitrides (TiWNX) as the Schottky contacts materials on Ga0.51In0.49P were studied. Due to the high bandgap nature of Ga0.51In0.49P, the Schottky contacts on Ga0.51In0.49P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the materials and the annealing conditions. For single-metal contacts, Pt film shows the best thermal stability, the barrier height of 1.09 eV and the ideality factor of 1.06 were obtained for the Pt Schottky diode with furnace annealing at 500 °C for 30 min. For refractory compound films, the TiWNX film shows the best thermal stability. The TiWNX Schottky contacts demonstrate excellent electrical as well as physical characteristics, even after high temperature annealing at 850 °C.
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M3 - Conference contribution
AN - SCOPUS:0027149470
SN - 1558991778
T3 - Materials Research Society Symposium Proceedings
SP - 253
EP - 258
BT - Chemical Perspectives of Microelectronic Materials III
PB - Publ by Materials Research Society
ER -