Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials

Yen-Kuang Kuo, Hsu Ching Huang, Jih-Yuan Chang, Yuni Chang, Kuo Kai Horng, Ya Lien Huang, Wen Wei Lin, Man-Fang Huang

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.

Original languageEnglish
Pages (from-to)790-791
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 2000 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials'. Together they form a unique fingerprint.

Cite this