Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials

Yen-Kuang Kuo, Hsu Ching Huang, Jih-Yuan Chang, Yuni Chang, Kuo Kai Horng, Ya Lien Huang, Wen Wei Lin, Man-Fang Huang

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.

Original languageEnglish
Pages (from-to)790-791
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 2000 Dec 1

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Semiconductor quantum wells
Optical properties
Semiconductor materials
Distributed Bragg reflectors
Tensile strain
Aluminum
Photoluminescence
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials",
abstract = "The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.",
author = "Yen-Kuang Kuo and Huang, {Hsu Ching} and Jih-Yuan Chang and Yuni Chang and Horng, {Kuo Kai} and Huang, {Ya Lien} and Lin, {Wen Wei} and Man-Fang Huang",
year = "2000",
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language = "English",
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pages = "790--791",
journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
issn = "1092-8081",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials. / Kuo, Yen-Kuang; Huang, Hsu Ching; Chang, Jih-Yuan; Chang, Yuni; Horng, Kuo Kai; Huang, Ya Lien; Lin, Wen Wei; Huang, Man-Fang.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 01.12.2000, p. 790-791.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials

AU - Kuo, Yen-Kuang

AU - Huang, Hsu Ching

AU - Chang, Jih-Yuan

AU - Chang, Yuni

AU - Horng, Kuo Kai

AU - Huang, Ya Lien

AU - Lin, Wen Wei

AU - Huang, Man-Fang

PY - 2000/12/1

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N2 - The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.

AB - The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.

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JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

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