Abstract
The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.
| Original language | English |
|---|---|
| Pages (from-to) | 790-791 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| Publication status | Published - 2000 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Kuo, Y-K., Huang, H. C., Chang, J-Y., Chang, Y., Horng, K. K., Huang, Y. L., Lin, W. W., & Huang, M-F. (2000). Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 790-791.