Abstract
The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.
| Original language | English |
|---|---|
| Pages (from-to) | 790-791 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| Publication status | Published - 2000 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials. / Kuo, Yen-Kuang; Huang, Hsu Ching; Chang, Jih-Yuan; Chang, Yuni; Horng, Kuo Kai; Huang, Ya Lien; Lin, Wen Wei; Huang, Man-Fang.
In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 01.12.2000, p. 790-791.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials
AU - Kuo, Yen-Kuang
AU - Huang, Hsu Ching
AU - Chang, Jih-Yuan
AU - Chang, Yuni
AU - Horng, Kuo Kai
AU - Huang, Ya Lien
AU - Lin, Wen Wei
AU - Huang, Man-Fang
PY - 2000/12/1
Y1 - 2000/12/1
N2 - The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.
AB - The optical properties of the 570-nm, yellow-green, AlGaInP semiconductor materials were experimentally studied with a photoluminescence (PL) measurement system and numerically with a commercial Lastip simulation program. As a result, the effects of the aluminum composition in wells of the AlGaInP multiple quantum well (MQW) structures, the barrier height in quantum wells, the tensile strain barrier cladding (TSBC) next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector (DBR) on the optical properties of the AlGaInP devices were determined.
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M3 - Conference article
AN - SCOPUS:0034484295
VL - 2
SP - 790
EP - 791
JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
SN - 1092-8081
ER -