Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films

Ramesh Chandra Bhatt, Lin Xiu Ye, Yi Jyun Zou, Sheng Zhe Ciou, Jong Ching Wu, Te ho Wu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.

Original languageEnglish
Article number165688
JournalJournal of Magnetism and Magnetic Materials
Volume492
DOIs
Publication statusPublished - 2019 Dec 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films'. Together they form a unique fingerprint.

  • Cite this