Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films

Ramesh Chandra Bhatt, Lin Xiu Ye, Yi Jyun Zou, Sheng Zhe Ciou, Jong-Ching Wu, Te ho Wu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.

Original languageEnglish
Article number165688
JournalJournal of Magnetism and Magnetic Materials
Volume492
DOIs
Publication statusPublished - 2019 Dec 15

Fingerprint

Hall effect
Coercive force
Magnetization
Thin films
magnetization
Magnetoelectronics
Joule heating
Electric currents
thin films
Aspect ratio
Magnetic properties
Orbits
Torque
coercivity
Electric potential
electrical resistivity
electric current
torque
aspect ratio
magnetic properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films",
abstract = "The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.",
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Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films. / Bhatt, Ramesh Chandra; Ye, Lin Xiu; Zou, Yi Jyun; Ciou, Sheng Zhe; Wu, Jong-Ching; Wu, Te ho.

In: Journal of Magnetism and Magnetic Materials, Vol. 492, 165688, 15.12.2019.

Research output: Contribution to journalArticle

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AU - Bhatt, Ramesh Chandra

AU - Ye, Lin Xiu

AU - Zou, Yi Jyun

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AU - Wu, Jong-Ching

AU - Wu, Te ho

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AB - The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.

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