Abstract
The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.
| Original language | English |
|---|---|
| Article number | 165688 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 492 |
| DOIs | |
| Publication status | Published - 2019 Dec 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films. / Bhatt, Ramesh Chandra; Ye, Lin Xiu; Zou, Yi Jyun; Ciou, Sheng Zhe; Wu, Jong-Ching; Wu, Te ho.
In: Journal of Magnetism and Magnetic Materials, Vol. 492, 165688, 15.12.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films
AU - Bhatt, Ramesh Chandra
AU - Ye, Lin Xiu
AU - Zou, Yi Jyun
AU - Ciou, Sheng Zhe
AU - Wu, Jong-Ching
AU - Wu, Te ho
PY - 2019/12/15
Y1 - 2019/12/15
N2 - The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.
AB - The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.
UR - http://www.scopus.com/inward/record.url?scp=85070524878&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85070524878&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2019.165688
DO - 10.1016/j.jmmm.2019.165688
M3 - Article
AN - SCOPUS:85070524878
VL - 492
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
M1 - 165688
ER -