Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films

The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.