Study of Schottky contacts on n-Ga 0.51 In 0.49 P by low-pressure metal-organic chemical-vapor deposition

Edward Y. Chang, Yeong-Lin Lai, Kun Chuan Lin, Chun Yen Chang

Research output: Contribution to journalArticle

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Abstract

A comprehensive study of the Schottky contacts on Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi 2 , W 5 Si 3 PtSi, and Pt 2 Si), and TiW nitrides (TiWN X ) as the Schottky contacts metals on Ga 0.51 In 0.49 P were studied. Due to the high-band-gap nature of Ga 0.51 In 0.49 P, the Schottky contacts on Ga 0.51 In 0.49 P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN X film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.

Original languageEnglish
Pages (from-to)5622-5625
Number of pages4
JournalJournal of Applied Physics
Volume74
Issue number9
DOIs
Publication statusPublished - 1993 Dec 1

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metalorganic chemical vapor deposition
electric contacts
low pressure
metals
thermal stability
annealing
silicides
refractories
Schottky diodes
metal films
nitrides
furnaces
nitrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{afc15091c3ca4aca8baa8f6bd1043d1b,
title = "Study of Schottky contacts on n-Ga 0.51 In 0.49 P by low-pressure metal-organic chemical-vapor deposition",
abstract = "A comprehensive study of the Schottky contacts on Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi 2 , W 5 Si 3 PtSi, and Pt 2 Si), and TiW nitrides (TiWN X ) as the Schottky contacts metals on Ga 0.51 In 0.49 P were studied. Due to the high-band-gap nature of Ga 0.51 In 0.49 P, the Schottky contacts on Ga 0.51 In 0.49 P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN X film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.",
author = "Chang, {Edward Y.} and Yeong-Lin Lai and Lin, {Kun Chuan} and Chang, {Chun Yen}",
year = "1993",
month = "12",
day = "1",
doi = "10.1063/1.354223",
language = "English",
volume = "74",
pages = "5622--5625",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Study of Schottky contacts on n-Ga 0.51 In 0.49 P by low-pressure metal-organic chemical-vapor deposition . / Chang, Edward Y.; Lai, Yeong-Lin; Lin, Kun Chuan; Chang, Chun Yen.

In: Journal of Applied Physics, Vol. 74, No. 9, 01.12.1993, p. 5622-5625.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of Schottky contacts on n-Ga 0.51 In 0.49 P by low-pressure metal-organic chemical-vapor deposition

AU - Chang, Edward Y.

AU - Lai, Yeong-Lin

AU - Lin, Kun Chuan

AU - Chang, Chun Yen

PY - 1993/12/1

Y1 - 1993/12/1

N2 - A comprehensive study of the Schottky contacts on Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi 2 , W 5 Si 3 PtSi, and Pt 2 Si), and TiW nitrides (TiWN X ) as the Schottky contacts metals on Ga 0.51 In 0.49 P were studied. Due to the high-band-gap nature of Ga 0.51 In 0.49 P, the Schottky contacts on Ga 0.51 In 0.49 P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN X film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.

AB - A comprehensive study of the Schottky contacts on Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi 2 , W 5 Si 3 PtSi, and Pt 2 Si), and TiW nitrides (TiWN X ) as the Schottky contacts metals on Ga 0.51 In 0.49 P were studied. Due to the high-band-gap nature of Ga 0.51 In 0.49 P, the Schottky contacts on Ga 0.51 In 0.49 P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN X film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.

UR - http://www.scopus.com/inward/record.url?scp=0001362364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001362364&partnerID=8YFLogxK

U2 - 10.1063/1.354223

DO - 10.1063/1.354223

M3 - Article

AN - SCOPUS:0001362364

VL - 74

SP - 5622

EP - 5625

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -