Abstract
A comprehensive study of the Schottky contacts on Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi 2 , W 5 Si 3 PtSi, and Pt 2 Si), and TiW nitrides (TiWN X ) as the Schottky contacts metals on Ga 0.51 In 0.49 P were studied. Due to the high-band-gap nature of Ga 0.51 In 0.49 P, the Schottky contacts on Ga 0.51 In 0.49 P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN X film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 5622-5625 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 74 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1993 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Study of Schottky contacts on n-Ga 0.51 In 0.49 P by low-pressure metal-organic chemical-vapor deposition . / Chang, Edward Y.; Lai, Yeong-Lin; Lin, Kun Chuan; Chang, Chun Yen.
In: Journal of Applied Physics, Vol. 74, No. 9, 01.12.1993, p. 5622-5625.Research output: Contribution to journal › Article
TY - JOUR
T1 - Study of Schottky contacts on n-Ga 0.51 In 0.49 P by low-pressure metal-organic chemical-vapor deposition
AU - Chang, Edward Y.
AU - Lai, Yeong-Lin
AU - Lin, Kun Chuan
AU - Chang, Chun Yen
PY - 1993/12/1
Y1 - 1993/12/1
N2 - A comprehensive study of the Schottky contacts on Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi 2 , W 5 Si 3 PtSi, and Pt 2 Si), and TiW nitrides (TiWN X ) as the Schottky contacts metals on Ga 0.51 In 0.49 P were studied. Due to the high-band-gap nature of Ga 0.51 In 0.49 P, the Schottky contacts on Ga 0.51 In 0.49 P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN X film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.
AB - A comprehensive study of the Schottky contacts on Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi 2 , W 5 Si 3 PtSi, and Pt 2 Si), and TiW nitrides (TiWN X ) as the Schottky contacts metals on Ga 0.51 In 0.49 P were studied. Due to the high-band-gap nature of Ga 0.51 In 0.49 P, the Schottky contacts on Ga 0.51 In 0.49 P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN X film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.
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U2 - 10.1063/1.354223
DO - 10.1063/1.354223
M3 - Article
VL - 74
SP - 5622
EP - 5625
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
ER -