TY - JOUR
T1 -
Study of Schottky contacts on n-Ga
0.51
In
0.49
P by low-pressure metal-organic chemical-vapor deposition
AU - Chang, Edward Y.
AU - Lai, Yeong-Lin
AU - Lin, Kun Chuan
AU - Chang, Chun Yen
PY - 1993/12/1
Y1 - 1993/12/1
N2 -
A comprehensive study of the Schottky contacts on Ga
0.51
In
0.49
P has been made. The Ga
0.51
In
0.49
P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi
2
, W
5
Si
3
PtSi, and Pt
2
Si), and TiW nitrides (TiWN
X
) as the Schottky contacts metals on Ga
0.51
In
0.49
P were studied. Due to the high-band-gap nature of Ga
0.51
In
0.49
P, the Schottky contacts on Ga
0.51
In
0.49
P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN
X
film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.
AB -
A comprehensive study of the Schottky contacts on Ga
0.51
In
0.49
P has been made. The Ga
0.51
In
0.49
P epitaxial layer was successfully grown on the GaAs substrate by low-pressure metal-organic chemical-vapor deposition to form a lattice-matched heterostructure. Three different types of films, including single-layer metal (Pt, Ni, Pd, Au, Co, Mo, W, Cr, Ti, Al, Ta, and In), metal silicides (WSi
2
, W
5
Si
3
PtSi, and Pt
2
Si), and TiW nitrides (TiWN
X
) as the Schottky contacts metals on Ga
0.51
In
0.49
P were studied. Due to the high-band-gap nature of Ga
0.51
In
0.49
P, the Schottky contacts on Ga
0.51
In
0.49
P demonstrate good characteristics. The barrier heights range from 0.79 to 1.19 eV depending on the selection of the metals and the annealing conditions. Among single-metal films, Pt film demonstrates the best thermal stability. A barrier height of 1.09 eV and an ideality factor of 1.06 were obtained even after the Pt Schottky diode was furnace annealed at 500 °C for 30 min. For refractory compounds, the TiWN
X
film with the highest nitrogen content shows the best thermal stability with a barrier height of 1.00 eV and an ideality factor of 1.04 even after high-temperature annealing at 850 °C.
UR - http://www.scopus.com/inward/record.url?scp=0001362364&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001362364&partnerID=8YFLogxK
U2 - 10.1063/1.354223
DO - 10.1063/1.354223
M3 - Article
AN - SCOPUS:0001362364
VL - 74
SP - 5622
EP - 5625
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
ER -