Abstract
In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.
| Original language | English |
|---|---|
| Pages (from-to) | 1036-1040 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 33 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2004 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements. / Lin, Yow Jon; Hsu, Chou Wei.
In: Journal of Electronic Materials, Vol. 33, No. 9, 01.01.2004, p. 1036-1040.Research output: Contribution to journal › Article
TY - JOUR
T1 - Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements
AU - Lin, Yow Jon
AU - Hsu, Chou Wei
PY - 2004/1/1
Y1 - 2004/1/1
N2 - In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.
AB - In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.
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U2 - 10.1007/s11664-004-0032-y
DO - 10.1007/s11664-004-0032-y
M3 - Article
AN - SCOPUS:4944232306
VL - 33
SP - 1036
EP - 1040
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 9
ER -