Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements

Yow Jon Lin; Chou Wei Hsu

doi:10.1007/s11664-004-0032-y

Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements

Yow Jon Lin, Chou Wei Hsu

Graduate Institute of Photonics

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17 Citations (Scopus)

Abstract

In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.

Original language	English
Pages (from-to)	1036-1040
Number of pages	5
Journal	Journal of Electronic Materials
Volume	33
Issue number	9
DOIs	https://doi.org/10.1007/s11664-004-0032-y
Publication status	Published - 2004 Sep

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Lin, Y. J., & Hsu, C. W. (2004). Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements. Journal of Electronic Materials, 33(9), 1036-1040. https://doi.org/10.1007/s11664-004-0032-y

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title = "Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements",

abstract = "In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.",

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AU - Hsu, Chou Wei

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N2 - In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.

AB - In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.

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10.1007/s11664-004-0032-y