Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements

Yow Jon Lin, Chou Wei Hsu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.

Original languageEnglish
Pages (from-to)1036-1040
Number of pages5
JournalJournal of Electronic Materials
Volume33
Issue number9
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Voltage measurement
Electric current measurement
Tin oxides
indium oxides
Indium
electrical measurement
tin oxides
X ray photoelectron spectroscopy
photoelectron spectroscopy
Photoelectron spectroscopy
x ray spectroscopy
x rays
Schottky diodes
X rays
Diodes
Thermionic emission
thermionic emission
Field emission
indium tin oxide
field emission

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements",
abstract = "In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.",
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Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements. / Lin, Yow Jon; Hsu, Chou Wei.

In: Journal of Electronic Materials, Vol. 33, No. 9, 01.01.2004, p. 1036-1040.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements

AU - Lin, Yow Jon

AU - Hsu, Chou Wei

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N2 - In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.

AB - In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.

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