Study of poly(3-hexylthiophene) transistors with different blending materials

Yu Wu Wang, Wei Chia Su, Wen Kai Lin, Ming Tzu Chung, Tsung Ming Chen, Kang Chih Fan, Ming Han Chin, Nai Hsiang Ho, Yu Han Cheng, Jiun Hsien Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The correlations between microstructure and electrical properties of rr-PIHT blended with different materials transistors are investigated. The blended rr-P3HT transistors exhibit a high on/off current ratio of ∼ 104, a low leakage current of < I0-11 A. a small sub-threshold swing of ∼2.09 V/dec. and a highest mobility of ∼8.18 × 10-3 cm2/Vs.

Original languageEnglish
Title of host publication25th International Display Workshops, IDW 2018
PublisherInternational Display Workshops
Pages1539-1541
Number of pages3
ISBN (Electronic)9781510883918
Publication statusPublished - 2018 Jan 1
Event25th International Display Workshops, IDW 2018 - Nagoya, Japan
Duration: 2018 Dec 122018 Dec 14

Publication series

NameProceedings of the International Display Workshops
Volume3
ISSN (Print)1883-2490

Conference

Conference25th International Display Workshops, IDW 2018
CountryJapan
CityNagoya
Period18-12-1218-12-14

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All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Wang, Y. W., Su, W. C., Lin, W. K., Chung, M. T., Chen, T. M., Fan, K. C., Chin, M. H., Ho, N. H., Cheng, Y. H., & Lin, J. H. (2018). Study of poly(3-hexylthiophene) transistors with different blending materials. In 25th International Display Workshops, IDW 2018 (pp. 1539-1541). (Proceedings of the International Display Workshops; Vol. 3). International Display Workshops.