Study of poly(3-hexylthiophene) transistors with different blending materials

Yu-Wu Wang, Wei Chia Su, Wen Kai Lin, Ming Tzu Chung, Tsung Ming Chen, Kang Chih Fan, Ming Han Chin, Nai Hsiang Ho, Yu Han Cheng, Jiun Hsien Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The correlations between microstructure and electrical properties of rr-PIHT blended with different materials transistors are investigated. The blended rr-P3HT transistors exhibit a high on/off current ratio of ∼ 104, a low leakage current of < I0-11 A. a small sub-threshold swing of ∼2.09 V/dec. and a highest mobility of ∼8.18 × 10-3 cm2/Vs.

Original languageEnglish
Title of host publication25th International Display Workshops, IDW 2018
PublisherInternational Display Workshops
Pages1539-1541
Number of pages3
ISBN (Electronic)9781510883918
Publication statusPublished - 2018
Event25th International Display Workshops, IDW 2018 - Nagoya, Japan
Duration: 2018 Dec 122018 Dec 14

Publication series

NameProceedings of the International Display Workshops
Volume3
ISSN (Print)1883-2490

Conference

Conference25th International Display Workshops, IDW 2018
CountryJapan
CityNagoya
Period18-12-1218-12-14

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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  • Cite this

    Wang, Y-W., Su, W. C., Lin, W. K., Chung, M. T., Chen, T. M., Fan, K. C., Chin, M. H., Ho, N. H., Cheng, Y. H., & Lin, J. H. (2018). Study of poly(3-hexylthiophene) transistors with different blending materials. In 25th International Display Workshops, IDW 2018 (pp. 1539-1541). (Proceedings of the International Display Workshops; Vol. 3). International Display Workshops.