Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

Chang Da Tsai; Ching Hung Fu; Yow Jon Lin; Ching Ting Lee

doi:10.1016/S0038-1101(98)00306-2

Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

Chang Da Tsai, Ching Hung Fu, Yow Jon Lin, Ching Ting Lee

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm ^-2) and 0.58 A W ^-1 at 5 V bias for a 50 × 50 μm² photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.

Original language	English
Pages (from-to)	665-670
Number of pages	6
Journal	Solid-State Electronics
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(98)00306-2
Publication status	Published - 1999 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(98)00306-2

Fingerprint Dive into the research topics of 'Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode'. Together they form a unique fingerprint.

Cite this

@article{52753b2ceb994d2a883d9f83c2b5e1f3,

title = "Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode",

abstract = "We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.",

author = "Tsai, {Chang Da} and Fu, {Ching Hung} and Lin, {Yow Jon} and Lee, {Ching Ting}",

year = "1999",

month = jan,

day = "1",

doi = "10.1016/S0038-1101(98)00306-2",

language = "English",

volume = "43",

pages = "665--670",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

AU - Tsai, Chang Da

AU - Fu, Ching Hung

AU - Lin, Yow Jon

AU - Lee, Ching Ting

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.

AB - We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.

UR - http://www.scopus.com/inward/record.url?scp=0033100961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033100961&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(98)00306-2

DO - 10.1016/S0038-1101(98)00306-2

M3 - Article

AN - SCOPUS:0033100961

VL - 43

SP - 665

EP - 670

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -