Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

Chang Da Tsai, Ching Hung Fu, Yow Jon Lin, Ching Ting Lee

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.

Original languageEnglish
Pages (from-to)665-670
Number of pages6
JournalSolid-State Electronics
Volume43
Issue number3
DOIs
Publication statusPublished - 1999 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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