Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

Chang Da Tsai; Ching Hung Fu; Yow Jon Lin; Ching Ting Lee

doi:10.1016/S0038-1101(98)00306-2

Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

Chang Da Tsai, Ching Hung Fu, Yow Jon Lin, Ching Ting Lee

Graduate Institute of Photonics

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm ^-2) and 0.58 A W ^-1 at 5 V bias for a 50 × 50 μm² photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.

Original language	English
Pages (from-to)	665-670
Number of pages	6
Journal	Solid-State Electronics
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(98)00306-2
Publication status	Published - 1999 Jan 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Tsai, C. D., Fu, C. H., Lin, Y. J., & Lee, C. T. (1999). Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode. Solid-State Electronics, 43(3), 665-670. https://doi.org/10.1016/S0038-1101(98)00306-2

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abstract = "We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.",

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T1 - Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode

AU - Tsai, Chang Da

AU - Fu, Ching Hung

AU - Lin, Yow Jon

AU - Lee, Ching Ting

PY - 1999/1/1

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N2 - We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.

AB - We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.

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10.1016/S0038-1101(98)00306-2