Abstract
We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.
| Original language | English |
|---|---|
| Pages (from-to) | 665-670 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 43 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1999 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode. / Tsai, Chang Da; Fu, Ching Hung; Lin, Yow-Jon; Lee, Ching Ting.
In: Solid-State Electronics, Vol. 43, No. 3, 01.01.1999, p. 665-670.Research output: Contribution to journal › Article
TY - JOUR
T1 - Study of InGaP/GaAs/InGaP MSM photodetectors using indium-tin-oxide as transparent and antireflection Schottky electrode
AU - Tsai, Chang Da
AU - Fu, Ching Hung
AU - Lin, Yow-Jon
AU - Lee, Ching Ting
PY - 1999/1/1
Y1 - 1999/1/1
N2 - We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.
AB - We report the performance of InGaP/GaAs/InGaP metal-semiconductor-metal photodetectors (MSM-PD's) using indium-tin-oxide (ITO) as transparent and antireflection Schottky electrode. The dark current and photoresponsivity of about 60 pA (i.e. 2.4 μA cm -2) and 0.58 A W -1 at 5 V bias for a 50 × 50 μm2 photosensitive area with 2 μm fingers and spaces were measured. We demonstrated that the corresponding rise time, fall time, full width at half maximum and 3 dB bandwidth of temporal responses were 26.4, 134.6, 44.6 ps and 7.0 GHz, respectively. The results of InGaP/GaAs/InGaP MSM-PD's with an ITO Schottky electrode were compared to those of identical geometry devices fabricated with a Ti/Pt/Au Schottky electrode.
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U2 - 10.1016/S0038-1101(98)00306-2
DO - 10.1016/S0038-1101(98)00306-2
M3 - Article
AN - SCOPUS:0033100961
VL - 43
SP - 665
EP - 670
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 3
ER -