Study of failure mechanisms for InGaN light-emitting diode chips with patterned sapphire substrates

Man Fang Huang, Chia Hung Sun, Hsu Han Yang, Fang Ming Chen, Tzung Te Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we investigated the failure mechanisms of blue InGaN LEDs grown on patterned sapphire substrates and demonstrated the influence of patterned sapphire substrates on the reliability of GaN LED by comparing with conventional LEDs grown on planar sapphire substrates. From experimental results, we found that InGaN LEDs grown on patterned substrates had a higher turn-on voltage but a smaller series resistance compared with conventional LEDs owing to rough inner patterns and small threading dislocation density. Both samples were then acceleratedly aged under a high DC current for two hours. Failure modes were studied with various measurements taken before and after aging. From the power evolution performance, we found that output power of LEDs with patterned substrates increased slightly due to fewer defects while output power of conventional LEDs decayed. This can be inferred from small reverse leakage currents and tunneling currents observed from Log I-V characteristics and EMMI measurement of P-LEDs. A slight redshift in emission wavelength was also found during aging because of possible leakage shunt paths caused by defect generation. Moreover, operation voltage increased slightly after aging which was caused by contact degradation induced by thermal annealing.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XIX
EditorsKlaus P. Streubel, Heonsu Jeon, Li-Wei Tu, Martin Strassburg
PublisherSPIE
ISBN (Electronic)9781628414738
DOIs
Publication statusPublished - 2015 Jan 1
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX - San Francisco, United States
Duration: 2015 Feb 102015 Feb 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9383
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX
CountryUnited States
CitySan Francisco
Period15-02-1015-02-12

Fingerprint

InGaN
Failure Mechanism
Aluminum Oxide
Sapphire
Diode
Light emitting diodes
sapphire
Chip
light emitting diodes
chips
Substrate
Substrates
Defects
Voltage
Aging of materials
Leakage Current
Output
Failure Mode
Dislocation
leakage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Huang, M. F., Sun, C. H., Yang, H. H., Chen, F. M., & Chen, T. T. (2015). Study of failure mechanisms for InGaN light-emitting diode chips with patterned sapphire substrates. In K. P. Streubel, H. Jeon, L-W. Tu, & M. Strassburg (Eds.), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX [93831J] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9383). SPIE. https://doi.org/10.1117/12.2079296
Huang, Man Fang ; Sun, Chia Hung ; Yang, Hsu Han ; Chen, Fang Ming ; Chen, Tzung Te. / Study of failure mechanisms for InGaN light-emitting diode chips with patterned sapphire substrates. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. editor / Klaus P. Streubel ; Heonsu Jeon ; Li-Wei Tu ; Martin Strassburg. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).
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Huang, MF, Sun, CH, Yang, HH, Chen, FM & Chen, TT 2015, Study of failure mechanisms for InGaN light-emitting diode chips with patterned sapphire substrates. in KP Streubel, H Jeon, L-W Tu & M Strassburg (eds), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX., 93831J, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9383, SPIE, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, San Francisco, United States, 15-02-10. https://doi.org/10.1117/12.2079296

Study of failure mechanisms for InGaN light-emitting diode chips with patterned sapphire substrates. / Huang, Man Fang; Sun, Chia Hung; Yang, Hsu Han; Chen, Fang Ming; Chen, Tzung Te.

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. ed. / Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg. SPIE, 2015. 93831J (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9383).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Huang MF, Sun CH, Yang HH, Chen FM, Chen TT. Study of failure mechanisms for InGaN light-emitting diode chips with patterned sapphire substrates. In Streubel KP, Jeon H, Tu L-W, Strassburg M, editors, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX. SPIE. 2015. 93831J. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2079296