The structural defects of GaN deposited on (111) Si with Gd2O3-related rare earth oxide buffer layers were investigated using a double-crystal x-ray rocking curve (DCXRC), high resolution transmission electron microscopy (HRTEM). By comparing the DCXRC signals of (1 102)GaN and (1 212)GaN asymmetric planes and (0002)GaN symmetric plane, respectively, it was found that most of the threading dislocations (TDs) in GaN of the GaN on (111) Si using Gd2O3 or Er2O3/Gd2O3 buffer layer are type a TDs in nature. Based on the results of DCXRC studies, it is believed that the full-width at half maxima of the DCXRC signals of (1 102)GaN and (1 212)GaN asymmetric planes are primarily due to the contributions of the 1/3〈1 210〉GaN components of the Burgers vectors of type a and type c + a TDs on the interplanar spacing distortions of (1 102)GaN and (1 212)GaN planes in GaN of the GaN/Er2O3/Gd2O3/(111) Si samples. HRTEM observations also revealed the presence of extrinsic stacking faults and Frankel partial dislocations in GaN of the GaN on the (111) Si sample with Gd2O3 or Er2O3/Gd2O3 buffer layer.
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2017 Nov 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films