Structural characteristics of ZnO films grown on (0001) or (11-20) sapphire substrates by atomic layer deposition

Kuang Pi Liu, Kuo Yi Yen, Ping Yuan Lin, Jyh Rong Gong, Kun Da Wu, Wei Li Chen

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The structural characteristics of zinc oxide (ZnO) films deposited on the (0001)- or (11-20) -oriented sapphire substrates were investigated. ZnO films having low temperature ZnO buffer layers were prepared by atomic layer deposition using diethylzinc and nitrous oxide. The ZnO films were analyzed using cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy and x-ray diffractometry. Cross-sectional high-resolution transmission electron microscopic observations showed the presence of extrinsic stacking faults along with Frankel partial dislocations in ZnO near the ZnO/sapphire heterointerface. Based on the results of cross-sectional transmission electron microscopic observations and double-crystal x-ray rocking curve measurements, it was found that buffer-layer annealing treatment tended to reduce the density of threading dislocations in a ZnO film efficiently so that the crystalline quality of the film was greatly improved.

Original languageEnglish
Article number03A101
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume29
Issue number3
DOIs
Publication statusPublished - 2011 May 1

Fingerprint

Zinc Oxide
Atomic layer deposition
Aluminum Oxide
atomic layer epitaxy
Zinc oxide
Sapphire
zinc oxides
Oxide films
oxide films
sapphire
Substrates
Buffer layers
buffers
X rays
transmission electron microscopy
Electrons
nitrous oxides
high resolution
Stacking faults
Nitrous Oxide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "The structural characteristics of zinc oxide (ZnO) films deposited on the (0001)- or (11-20) -oriented sapphire substrates were investigated. ZnO films having low temperature ZnO buffer layers were prepared by atomic layer deposition using diethylzinc and nitrous oxide. The ZnO films were analyzed using cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy and x-ray diffractometry. Cross-sectional high-resolution transmission electron microscopic observations showed the presence of extrinsic stacking faults along with Frankel partial dislocations in ZnO near the ZnO/sapphire heterointerface. Based on the results of cross-sectional transmission electron microscopic observations and double-crystal x-ray rocking curve measurements, it was found that buffer-layer annealing treatment tended to reduce the density of threading dislocations in a ZnO film efficiently so that the crystalline quality of the film was greatly improved.",
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Structural characteristics of ZnO films grown on (0001) or (11-20) sapphire substrates by atomic layer deposition. / Liu, Kuang Pi; Yen, Kuo Yi; Lin, Ping Yuan; Gong, Jyh Rong; Wu, Kun Da; Chen, Wei Li.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 29, No. 3, 03A101, 01.05.2011.

Research output: Contribution to journalArticle

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