Strain relaxation and quantum confinement in InGaN/GaN nanoposts

Horng Shyang Chen; Dong Ming Yeh; Yen Cheng Lu; Cheng Yen Chen; Chi Feng Huang; Tsung Yi Tang; C. C. Yang; Cen Shawn Wu; Chii Dong Chen

doi:10.1088/0957-4484/17/5/048

Strain relaxation and quantum confinement in InGaN/GaN nanoposts

Horng Shyang Chen, Dong Ming Yeh, Yen Cheng Lu, Cheng Yen Chen, Chi Feng Huang, Tsung Yi Tang, C. C. Yang, Cen Shawn Wu, Chii Dong Chen

Department of Physics

Research output: Contribution to journal › Article

98 Citations (Scopus)

Abstract

Nanoposts of 10-40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.

Original language	English
Pages (from-to)	1454-1458
Number of pages	5
Journal	Nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1088/0957-4484/17/5/048
Publication status	Published - 2006 Mar 14

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All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Cite this

Chen, H. S., Yeh, D. M., Lu, Y. C., Chen, C. Y., Huang, C. F., Tang, T. Y., Yang, C. C., Wu, C. S., & Chen, C. D. (2006). Strain relaxation and quantum confinement in InGaN/GaN nanoposts. Nanotechnology, 17(5), 1454-1458. https://doi.org/10.1088/0957-4484/17/5/048

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abstract = "Nanoposts of 10-40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.",

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AU - Huang, Chi Feng

AU - Tang, Tsung Yi

AU - Yang, C. C.

AU - Wu, Cen Shawn

AU - Chen, Chii Dong

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AB - Nanoposts of 10-40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.

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10.1088/0957-4484/17/5/048