Abstract
Nanoposts of 10-40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.
| Original language | English |
|---|---|
| Pages (from-to) | 1454-1458 |
| Number of pages | 5 |
| Journal | Nanotechnology |
| Volume | 17 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2006 Mar 14 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
Cite this
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Strain relaxation and quantum confinement in InGaN/GaN nanoposts. / Chen, Horng Shyang; Yeh, Dong Ming; Lu, Yen Cheng; Chen, Cheng Yen; Huang, Chi Feng; Tang, Tsung Yi; Yang, C. C.; Wu, Cen Shawn; Chen, Chii Dong.
In: Nanotechnology, Vol. 17, No. 5, 14.03.2006, p. 1454-1458.Research output: Contribution to journal › Article
TY - JOUR
T1 - Strain relaxation and quantum confinement in InGaN/GaN nanoposts
AU - Chen, Horng Shyang
AU - Yeh, Dong Ming
AU - Lu, Yen Cheng
AU - Chen, Cheng Yen
AU - Huang, Chi Feng
AU - Tang, Tsung Yi
AU - Yang, C. C.
AU - Wu, Cen Shawn
AU - Chen, Chii Dong
PY - 2006/3/14
Y1 - 2006/3/14
N2 - Nanoposts of 10-40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.
AB - Nanoposts of 10-40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.
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U2 - 10.1088/0957-4484/17/5/048
DO - 10.1088/0957-4484/17/5/048
M3 - Article
AN - SCOPUS:33144483699
VL - 17
SP - 1454
EP - 1458
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 5
ER -