Stability in the memory state of the silica nanoparticle-doped hybrid aligned nematic device

Chi-Yen Huang, Jian Hong Chen, Chia Ting Hsieh, Heng Cheng Song, Yu-Wu Wang, Lance Horng, Ching Jui Tian, Shug June Hwang

Research output: Contribution to journalArticle

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Abstract

We investigate the stability in the memory state of the silica nanoparticle doped hybrid aligned nematic (SN-HAN) cell. The mixed polyimide (PI)-coated planar substrate provides the SN-HAN cell with a stable memory state. The mixed PI comprises the homogeneous PI and small amounts of the homeotropic PI (H-PI). The tiny H-PI dopant decreases the surface energy, increases the roughness of the planar substrate, and increases the pretilt angle of the liquid crystals (LCs). When the pretilt angle is high, the relaxation torque that rewinds the LCs from the electrically addressed homeotropic state to the originally HAN state is too small to break the formed aggregated silica networks, which stabilize the LCs at the electrically addressed homeotropic state. Consequently, the memory state of the SN-HAN cell is stable when the pretilt angle of the LCs is high.

Original languageEnglish
Article number023505
JournalJournal of Applied Physics
Volume109
Issue number2
DOIs
Publication statusPublished - 2011 Jan 15

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polyimides
liquid crystals
silicon dioxide
nanoparticles
cells
surface energy
torque
roughness

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Huang, Chi-Yen ; Chen, Jian Hong ; Hsieh, Chia Ting ; Song, Heng Cheng ; Wang, Yu-Wu ; Horng, Lance ; Tian, Ching Jui ; Hwang, Shug June. / Stability in the memory state of the silica nanoparticle-doped hybrid aligned nematic device. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 2.
@article{ba4e92d8f9af4bc5b8f03c5418b50257,
title = "Stability in the memory state of the silica nanoparticle-doped hybrid aligned nematic device",
abstract = "We investigate the stability in the memory state of the silica nanoparticle doped hybrid aligned nematic (SN-HAN) cell. The mixed polyimide (PI)-coated planar substrate provides the SN-HAN cell with a stable memory state. The mixed PI comprises the homogeneous PI and small amounts of the homeotropic PI (H-PI). The tiny H-PI dopant decreases the surface energy, increases the roughness of the planar substrate, and increases the pretilt angle of the liquid crystals (LCs). When the pretilt angle is high, the relaxation torque that rewinds the LCs from the electrically addressed homeotropic state to the originally HAN state is too small to break the formed aggregated silica networks, which stabilize the LCs at the electrically addressed homeotropic state. Consequently, the memory state of the SN-HAN cell is stable when the pretilt angle of the LCs is high.",
author = "Chi-Yen Huang and Chen, {Jian Hong} and Hsieh, {Chia Ting} and Song, {Heng Cheng} and Yu-Wu Wang and Lance Horng and Tian, {Ching Jui} and Hwang, {Shug June}",
year = "2011",
month = "1",
day = "15",
doi = "10.1063/1.3531993",
language = "English",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Stability in the memory state of the silica nanoparticle-doped hybrid aligned nematic device. / Huang, Chi-Yen; Chen, Jian Hong; Hsieh, Chia Ting; Song, Heng Cheng; Wang, Yu-Wu; Horng, Lance; Tian, Ching Jui; Hwang, Shug June.

In: Journal of Applied Physics, Vol. 109, No. 2, 023505, 15.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Stability in the memory state of the silica nanoparticle-doped hybrid aligned nematic device

AU - Huang, Chi-Yen

AU - Chen, Jian Hong

AU - Hsieh, Chia Ting

AU - Song, Heng Cheng

AU - Wang, Yu-Wu

AU - Horng, Lance

AU - Tian, Ching Jui

AU - Hwang, Shug June

PY - 2011/1/15

Y1 - 2011/1/15

N2 - We investigate the stability in the memory state of the silica nanoparticle doped hybrid aligned nematic (SN-HAN) cell. The mixed polyimide (PI)-coated planar substrate provides the SN-HAN cell with a stable memory state. The mixed PI comprises the homogeneous PI and small amounts of the homeotropic PI (H-PI). The tiny H-PI dopant decreases the surface energy, increases the roughness of the planar substrate, and increases the pretilt angle of the liquid crystals (LCs). When the pretilt angle is high, the relaxation torque that rewinds the LCs from the electrically addressed homeotropic state to the originally HAN state is too small to break the formed aggregated silica networks, which stabilize the LCs at the electrically addressed homeotropic state. Consequently, the memory state of the SN-HAN cell is stable when the pretilt angle of the LCs is high.

AB - We investigate the stability in the memory state of the silica nanoparticle doped hybrid aligned nematic (SN-HAN) cell. The mixed polyimide (PI)-coated planar substrate provides the SN-HAN cell with a stable memory state. The mixed PI comprises the homogeneous PI and small amounts of the homeotropic PI (H-PI). The tiny H-PI dopant decreases the surface energy, increases the roughness of the planar substrate, and increases the pretilt angle of the liquid crystals (LCs). When the pretilt angle is high, the relaxation torque that rewinds the LCs from the electrically addressed homeotropic state to the originally HAN state is too small to break the formed aggregated silica networks, which stabilize the LCs at the electrically addressed homeotropic state. Consequently, the memory state of the SN-HAN cell is stable when the pretilt angle of the LCs is high.

UR - http://www.scopus.com/inward/record.url?scp=79551673807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551673807&partnerID=8YFLogxK

U2 - 10.1063/1.3531993

DO - 10.1063/1.3531993

M3 - Article

AN - SCOPUS:79551673807

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 023505

ER -