Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing

S. S. Tan, C. Y. Liu, Yeu Long Jiang, Der-Yuh Lin, Klaus Y J Hsu

Research output: Contribution to journalArticle

Abstract

For the applications involving ambient light sensing, the spectral response of photodetectors is required to mimic that of human eyes and the cost must be low. This paper discusses the layer structure design of human-eye-like hydrogenated amorphous silicon (a-Si:H) p-i-n photodiodes. The resultant sample devices are insensitive to infrared light and have a normal spectral response in the light band ranging between 400 nm wavelength and 740 nm wavelength. The spectrum peak locates around 560 nm wavelength, similar to the case of human eyes. The devices are suitable for low-cost ambient light sensing applications.

Original languageEnglish
Article number171103
JournalApplied Physics Letters
Volume94
Issue number17
DOIs
Publication statusPublished - 2009 May 11

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p-i-n diodes
spectral sensitivity
amorphous silicon
wavelengths
photodiodes
photometers
costs

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Tan, S. S. ; Liu, C. Y. ; Jiang, Yeu Long ; Lin, Der-Yuh ; Hsu, Klaus Y J. / Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing. In: Applied Physics Letters. 2009 ; Vol. 94, No. 17.
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Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing. / Tan, S. S.; Liu, C. Y.; Jiang, Yeu Long; Lin, Der-Yuh; Hsu, Klaus Y J.

In: Applied Physics Letters, Vol. 94, No. 17, 171103, 11.05.2009.

Research output: Contribution to journalArticle

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