Solution processed CuI/n-Si junction device annealed with and without iodine steam for ultraviolet photodetector applications

Yu Wu Wang, Cheng Yu Chuang

Research output: Contribution to journalArticle

Abstract

We report the fabrication and characterization of a facile and low-cost solution processed CuI/Si junction device for ultraviolet photodetector applications. The properties of CuI films are analyzed by Hall-effect measurement, X-ray diffraction pattern, ultraviolet–visible absorption spectrum, and field emission scanning electron microscope. The amount of iodine vacancies of CuI could be adjusted through subsequence anneals with/without iodine steam. Moderate process would improve the CuI crystallization and reduce iodine vacancies, and so thus raise the photocurrent and photo responsivity of CuI/Si junction. The made junction device performs a maximum Iphoto/Idark ratio of 3 × 104 to an ultraviolet light of 365 nm wavelength.

Original languageEnglish
Pages (from-to)18622-18627
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number21
DOIs
Publication statusPublished - 2018 Nov 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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