Solution processed CuI/n-Si junction device annealed with and without iodine steam for ultraviolet photodetector applications

Yu Wu Wang, Cheng Yu Chuang

Research output: Contribution to journalArticle

Abstract

We report the fabrication and characterization of a facile and low-cost solution processed CuI/Si junction device for ultraviolet photodetector applications. The properties of CuI films are analyzed by Hall-effect measurement, X-ray diffraction pattern, ultraviolet–visible absorption spectrum, and field emission scanning electron microscope. The amount of iodine vacancies of CuI could be adjusted through subsequence anneals with/without iodine steam. Moderate process would improve the CuI crystallization and reduce iodine vacancies, and so thus raise the photocurrent and photo responsivity of CuI/Si junction. The made junction device performs a maximum Iphoto/Idark ratio of 3 × 104 to an ultraviolet light of 365 nm wavelength.

Original languageEnglish
Pages (from-to)18622-18627
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number21
DOIs
Publication statusPublished - 2018 Nov 1

Fingerprint

Steam
Photodetectors
Iodine
steam
iodine
photometers
Vacancies
Hall effect
Crystallization
Photocurrents
ultraviolet radiation
Field emission
Diffraction patterns
photocurrents
Absorption spectra
field emission
Electron microscopes
diffraction patterns
electron microscopes
crystallization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "We report the fabrication and characterization of a facile and low-cost solution processed CuI/Si junction device for ultraviolet photodetector applications. The properties of CuI films are analyzed by Hall-effect measurement, X-ray diffraction pattern, ultraviolet–visible absorption spectrum, and field emission scanning electron microscope. The amount of iodine vacancies of CuI could be adjusted through subsequence anneals with/without iodine steam. Moderate process would improve the CuI crystallization and reduce iodine vacancies, and so thus raise the photocurrent and photo responsivity of CuI/Si junction. The made junction device performs a maximum Iphoto/Idark ratio of 3 × 104 to an ultraviolet light of 365 nm wavelength.",
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