Abstract
The optoelectronic properties of the In/ZnO nanoparticles/In and Au/ZnO nanoparticles/Au devices under illumination by sunlight are determined. ZnO nanoparticles were prepared by the sol–gel method. It is shown that the value of photosensitivity for Au/ZnO nanoparticles/Au devices is larger than the value of photosensitivity for In/ZnO nanoparticles/In devices. This is because of the formation of the depletion region at the Au/ZnO interfaces. In order to understand the relationship between the visible-emission absorption and photosensitivity, sub-gap state generation is used to describe the mechanism for the sensitivity of ZnO nanoparticles to solar irradiation. A direct link between the sensitivity to solar irradiation, oxygen vacancies and the photo-response time is established.
| Original language | English |
|---|---|
| Pages (from-to) | 61-67 |
| Number of pages | 7 |
| Journal | Optik |
| Volume | 142 |
| DOIs | |
| Publication status | Published - 2017 Aug |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
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Solar-irradiation photodetectors based on ZnO nanoparticles with gold and indium electrodes. / Lin, Yow Jon; Chen, Yao Ming; Chang, Hsing Cheng; Chen, Ya Hui.
In: Optik, Vol. 142, 08.2017, p. 61-67.Research output: Contribution to journal › Article
TY - JOUR
T1 - Solar-irradiation photodetectors based on ZnO nanoparticles with gold and indium electrodes
AU - Lin, Yow Jon
AU - Chen, Yao Ming
AU - Chang, Hsing Cheng
AU - Chen, Ya Hui
PY - 2017/8
Y1 - 2017/8
N2 - The optoelectronic properties of the In/ZnO nanoparticles/In and Au/ZnO nanoparticles/Au devices under illumination by sunlight are determined. ZnO nanoparticles were prepared by the sol–gel method. It is shown that the value of photosensitivity for Au/ZnO nanoparticles/Au devices is larger than the value of photosensitivity for In/ZnO nanoparticles/In devices. This is because of the formation of the depletion region at the Au/ZnO interfaces. In order to understand the relationship between the visible-emission absorption and photosensitivity, sub-gap state generation is used to describe the mechanism for the sensitivity of ZnO nanoparticles to solar irradiation. A direct link between the sensitivity to solar irradiation, oxygen vacancies and the photo-response time is established.
AB - The optoelectronic properties of the In/ZnO nanoparticles/In and Au/ZnO nanoparticles/Au devices under illumination by sunlight are determined. ZnO nanoparticles were prepared by the sol–gel method. It is shown that the value of photosensitivity for Au/ZnO nanoparticles/Au devices is larger than the value of photosensitivity for In/ZnO nanoparticles/In devices. This is because of the formation of the depletion region at the Au/ZnO interfaces. In order to understand the relationship between the visible-emission absorption and photosensitivity, sub-gap state generation is used to describe the mechanism for the sensitivity of ZnO nanoparticles to solar irradiation. A direct link between the sensitivity to solar irradiation, oxygen vacancies and the photo-response time is established.
UR - http://www.scopus.com/inward/record.url?scp=85020048844&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020048844&partnerID=8YFLogxK
U2 - 10.1016/j.ijleo.2017.05.068
DO - 10.1016/j.ijleo.2017.05.068
M3 - Article
AN - SCOPUS:85020048844
VL - 142
SP - 61
EP - 67
JO - Optik
JF - Optik
SN - 0030-4026
ER -