Abstract
The optoelectronic properties of the In/ZnO nanoparticles/In and Au/ZnO nanoparticles/Au devices under illumination by sunlight are determined. ZnO nanoparticles were prepared by the sol–gel method. It is shown that the value of photosensitivity for Au/ZnO nanoparticles/Au devices is larger than the value of photosensitivity for In/ZnO nanoparticles/In devices. This is because of the formation of the depletion region at the Au/ZnO interfaces. In order to understand the relationship between the visible-emission absorption and photosensitivity, sub-gap state generation is used to describe the mechanism for the sensitivity of ZnO nanoparticles to solar irradiation. A direct link between the sensitivity to solar irradiation, oxygen vacancies and the photo-response time is established.
Original language | English |
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Pages (from-to) | 61-67 |
Number of pages | 7 |
Journal | Optik |
Volume | 142 |
DOIs | |
Publication status | Published - 2017 Aug |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering