Sol-gel-derived Zn(1-x)MgxO thin films used as active channel layer of thin-film transistors

Jen Hao Lee, Pang Lin, Cheng Chung Lee, Jia Chong Ho, Yu-Wu Wang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Sol-gel derived n-type Zn(1-x)MgxO (x = 0-0.45) thin films and thin-film transistors (TFTs) with active channel layers made of the films were investigated. The films were prepared at 500°C. The effects of Mg doping on the crystallinity, optical transparency, grain size, and charge-carrier concentration (n) of the films were examined. The Fermi level of the films, as derived from the temperature dependence of n, was ∼0.12 eV below the conduction band. The donor concentration and donor level (E d) were derived by a curve fitting method based on the electrical neutrality condition. Ed was found to be ∼0.3 eV below the conduction band. The composition dependence of the TFT output characteristics was interpreted and correlated to the width of the depletion region adjacent to the grain boundaries. When the grains were almost depleted at x = 0.2, the TFT showed an enhancement mode and an on/off ratio of 106.

Original languageEnglish
Pages (from-to)4784-4789
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number7 A
DOIs
Publication statusPublished - 2005 Jul 8

Fingerprint

Thin film transistors
Sol-gels
transistors
gels
Thin films
thin films
Conduction bands
conduction bands
curve fitting
Curve fitting
Fermi level
Charge carriers
Transparency
Carrier concentration
charge carriers
crystallinity
Grain boundaries
depletion
grain boundaries
grain size

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Sol-gel derived n-type Zn(1-x)MgxO (x = 0-0.45) thin films and thin-film transistors (TFTs) with active channel layers made of the films were investigated. The films were prepared at 500°C. The effects of Mg doping on the crystallinity, optical transparency, grain size, and charge-carrier concentration (n) of the films were examined. The Fermi level of the films, as derived from the temperature dependence of n, was ∼0.12 eV below the conduction band. The donor concentration and donor level (E d) were derived by a curve fitting method based on the electrical neutrality condition. Ed was found to be ∼0.3 eV below the conduction band. The composition dependence of the TFT output characteristics was interpreted and correlated to the width of the depletion region adjacent to the grain boundaries. When the grains were almost depleted at x = 0.2, the TFT showed an enhancement mode and an on/off ratio of 106.",
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Sol-gel-derived Zn(1-x)MgxO thin films used as active channel layer of thin-film transistors. / Lee, Jen Hao; Lin, Pang; Lee, Cheng Chung; Ho, Jia Chong; Wang, Yu-Wu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 7 A, 08.07.2005, p. 4784-4789.

Research output: Contribution to journalArticle

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