The valence band electronic structures of the III-V phosphides BP, GaP, and InP were investigated using soft x-ray fluorescence spectroscopy and compared with band structure calculations using full-potential linearized augmented plane wave method based on density functional theory. The P (formula presented) spectra of these phosphorus compounds are reported and compared with the calculated (formula presented)-local partial densities of states (LPDOS’s). For BP, the B (formula presented) spectrum is also reported. Generally good agreement is obtained between the spectra and calculated LPDOS’s. Two other interesting results were found. The normally suppressed P (formula presented) spectrum was observed in resonance with the B (formula presented) spectrum of BP. Also, strong resonant inelastic x-ray scattering was observed at the Ga (formula presented) edge associated with energy loss to local electronic excitations from the Ga d states, permitting the Ga d states to be accurately located with respect to other band features.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2001 Jan 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics