Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes

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Abstract

In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.

Original languageEnglish
Article number6256695
Pages (from-to)1506-1508
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number17
DOIs
Publication statusPublished - 2012 Aug 17

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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