Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes

Yen Kuang Kuo; Tsun Hsin Wang; Jih Yuan Chang; Jen De Chen

doi:10.1109/LPT.2012.2207381

Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes

Yen Kuang Kuo, Tsun Hsin Wang, Jih Yuan Chang, Jen De Chen

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.

Original language	English
Article number	6256695
Pages (from-to)	1506-1508
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	17
DOIs	https://doi.org/10.1109/LPT.2012.2207381
Publication status	Published - 2012 Aug 17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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AU - Wang, Tsun Hsin

AU - Chang, Jih Yuan

AU - Chen, Jen De

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Y1 - 2012/8/17

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