Abstract
In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.
| Original language | English |
|---|---|
| Article number | 6256695 |
| Pages (from-to) | 1506-1508 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 24 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2012 Aug 17 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Kuo, Y. K., Wang, T. H., Chang, J. Y., & Chen, J. D. (2012). Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes. IEEE Photonics Technology Letters, 24(17), 1506-1508. [6256695]. https://doi.org/10.1109/LPT.2012.2207381