Abstract
In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.
| Original language | English |
|---|---|
| Article number | 6256695 |
| Pages (from-to) | 1506-1508 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 24 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2012 Aug 17 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
Cite this
}
Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes. / Kuo, Yen-Kuang; Wang, Tsun Hsin; Chang, Jih-Yuan; Chen, Jen-De.
In: IEEE Photonics Technology Letters, Vol. 24, No. 17, 6256695, 17.08.2012, p. 1506-1508.Research output: Contribution to journal › Article
TY - JOUR
T1 - Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes
AU - Kuo, Yen-Kuang
AU - Wang, Tsun Hsin
AU - Chang, Jih-Yuan
AU - Chen, Jen-De
PY - 2012/8/17
Y1 - 2012/8/17
N2 - In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.
AB - In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.
UR - http://www.scopus.com/inward/record.url?scp=84864955957&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864955957&partnerID=8YFLogxK
U2 - 10.1109/LPT.2012.2207381
DO - 10.1109/LPT.2012.2207381
M3 - Article
AN - SCOPUS:84864955957
VL - 24
SP - 1506
EP - 1508
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 17
M1 - 6256695
ER -