Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes

Yen Kuang Kuo; Tsun Hsin Wang; Jih Yuan Chang; Jen De Chen

doi:10.1109/LPT.2012.2207381

Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes

Yen Kuang Kuo, Tsun Hsin Wang, Jih Yuan Chang, Jen De Chen

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.

Original language	English
Article number	6256695
Pages (from-to)	1506-1508
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	17
DOIs	https://doi.org/10.1109/LPT.2012.2207381
Publication status	Published - 2012 Aug 17

Fingerprint

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Kuo, Y. K., Wang, T. H., Chang, J. Y., & Chen, J. D. (2012). Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes. IEEE Photonics Technology Letters, 24(17), 1506-1508. [6256695]. https://doi.org/10.1109/LPT.2012.2207381

@article{402a4519645f45fe99c408305808c886,

title = "Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes",

abstract = "In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.",

author = "Kuo, {Yen Kuang} and Wang, {Tsun Hsin} and Chang, {Jih Yuan} and Chen, {Jen De}",

year = "2012",

month = "8",

day = "17",

doi = "10.1109/LPT.2012.2207381",

language = "English",

volume = "24",

pages = "1506--1508",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "17",

}

TY - JOUR

T1 - Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes

AU - Kuo, Yen Kuang

AU - Wang, Tsun Hsin

AU - Chang, Jih Yuan

AU - Chen, Jen De

PY - 2012/8/17

Y1 - 2012/8/17

N2 - In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.

AB - In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.

UR - http://www.scopus.com/inward/record.url?scp=84864955957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864955957&partnerID=8YFLogxK

U2 - 10.1109/LPT.2012.2207381

DO - 10.1109/LPT.2012.2207381

M3 - Article

AN - SCOPUS:84864955957

VL - 24

SP - 1506

EP - 1508

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 17

M1 - 6256695

ER -

Access to Document

10.1109/LPT.2012.2207381