Size effects on switching field of ring-shaped permalloy elements

C. C. Chang; Y. C. Chang; J. C. Wu; Z. H. Wei; M. F. Lai; C. R. Chang; J. H. Kuo

doi:10.1016/j.jmmm.2004.04.082

Size effects on switching field of ring-shaped permalloy elements

C. C. Chang, Y. C. Chang, J. C. Wu, Z. H. Wei, M. F. Lai, C. R. Chang, J. H. Kuo

Department of Physics

Research output: Contribution to journal › Conference article

4 Citations (Scopus)

Abstract

The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	282
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jmmm.2004.04.082
Publication status	Published - 2004 Nov 1
Event	International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2004.04.082

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title = "Size effects on switching field of ring-shaped permalloy elements",

abstract = "The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.",

author = "Chang, {C. C.} and Chang, {Y. C.} and Wu, {J. C.} and Wei, {Z. H.} and Lai, {M. F.} and Chang, {C. R.} and Kuo, {J. H.}",

year = "2004",

month = nov,

day = "1",

doi = "10.1016/j.jmmm.2004.04.082",

language = "English",

volume = "282",

pages = "351--354",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1-3",

note = "International Symposium on Advanced Magnetic Technologies ; Conference date: 13-11-2003 Through 16-11-2003",

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TY - JOUR

T1 - Size effects on switching field of ring-shaped permalloy elements

AU - Chang, C. C.

AU - Chang, Y. C.

AU - Wu, J. C.

AU - Wei, Z. H.

AU - Lai, M. F.

AU - Chang, C. R.

AU - Kuo, J. H.

PY - 2004/11/1

Y1 - 2004/11/1

N2 - The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.

AB - The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.

UR - http://www.scopus.com/inward/record.url?scp=5744223678&partnerID=8YFLogxK

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U2 - 10.1016/j.jmmm.2004.04.082

DO - 10.1016/j.jmmm.2004.04.082

M3 - Conference article

AN - SCOPUS:5744223678

VL - 282

SP - 351

EP - 354

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1-3

T2 - International Symposium on Advanced Magnetic Technologies

Y2 - 13 November 2003 through 16 November 2003

ER -