Size effects on switching field of ring-shaped permalloy elements

C. C. Chang, Y. C. Chang, J. C. Wu, Z. H. Wei, M. F. Lai, C. R. Chang, J. H. Kuo

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume282
Issue number1-3
DOIs
Publication statusPublished - 2004 Nov 1
EventInternational Symposium on Advanced Magnetic Technologies - Taipei, Taiwan
Duration: 2003 Nov 132003 Nov 16

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Chang, C. C., Chang, Y. C., Wu, J. C., Wei, Z. H., Lai, M. F., Chang, C. R., & Kuo, J. H. (2004). Size effects on switching field of ring-shaped permalloy elements. Journal of Magnetism and Magnetic Materials, 282(1-3), 351-354. https://doi.org/10.1016/j.jmmm.2004.04.082