Abstract
The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 351-354 |
| Number of pages | 4 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 282 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2004 Nov 1 |
| Event | International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Size effects on switching field of ring-shaped permalloy elements. / Chang, C. C.; Chang, Y. C.; Wu, J. C.; Wei, Z. H.; Lai, M. F.; Chang, C. R.; Kuo, J. H.
In: Journal of Magnetism and Magnetic Materials, Vol. 282, No. 1-3, 01.11.2004, p. 351-354.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Size effects on switching field of ring-shaped permalloy elements
AU - Chang, C. C.
AU - Chang, Y. C.
AU - Wu, J. C.
AU - Wei, Z. H.
AU - Lai, M. F.
AU - Chang, C. R.
AU - Kuo, J. H.
PY - 2004/11/1
Y1 - 2004/11/1
N2 - The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.
AB - The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.
UR - http://www.scopus.com/inward/record.url?scp=5744223678&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=5744223678&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2004.04.082
DO - 10.1016/j.jmmm.2004.04.082
M3 - Conference article
AN - SCOPUS:5744223678
VL - 282
SP - 351
EP - 354
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 1-3
ER -