Abstract
The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2-5μm and a thickness of 14-66nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53-65nm, over which the switching field tends to decrease with increasing thickness.
Original language | English |
---|---|
Pages (from-to) | 351-354 |
Number of pages | 4 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 282 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2004 Nov 1 |
Event | International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan Duration: 2003 Nov 13 → 2003 Nov 16 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics