Size Effect on Interlayer Coupling and Magnetoresistance Oscillation of Magnetic Tunnel Junction Embedded with Iron Nanoparticles

Yen Chi Lee, Bipul Das, Te Ho Wu, Lance Horng, Jong-Ching Wu

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Abstract

Here, we investigate the size effect of perpendicular-Anisotropic double-barrier magnetic tunnel junction (MTJ) devices embedded with iron nanoparticles. A sputtering system in conjunction with the postannealing process is employed to prepare the sheet film and standard lithography techniques followed by the ion etching technique are used to fabricate the micrometer to submicrometer MTJ devices. A strong ferromagnetic coupling is observed as we reduce the size of the device to submicrometer scale, which is due to the reduction of magnetostatic energy of the device. Furthermore, a magnetoresistance (MR) oscillation is observed at room temperature while reducing the size of the device. MR peaks at low bias fields are believed to have magnon contributions, whereas the peaks observed at higher bias fields are responsible for phonon-Assisted tunneling. Zero-bias anomalies are also observed and are more prominent in antiparallel states of the devices.

Original languageEnglish
Article number7114315
JournalIEEE Transactions on Magnetics
Volume51
Issue number11
DOIs
Publication statusPublished - 2015 Nov 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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