SiO2 substrate passivation effects on the temperature-dependent electrical properties of MoS2 prepared by the chemical vapor deposition method

Yow-Jon Lin, Ting Hong Su

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport in MoS2. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS2 thin film deposited on a SiO2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS2 thin film deposited on a SiO2 substrate with H2O2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS2 thin film deposited on a SiO2 substrate with (NH4)2Sx treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS2-based transistor performance.

Original languageEnglish
Pages (from-to)10106-10111
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume28
Issue number14
DOIs
Publication statusPublished - 2017 Jul 1

Fingerprint

Passivation
passivity
Chemical vapor deposition
Electric properties
carrier mobility
electrical properties
vapor deposition
Carrier mobility
Substrates
Carrier transport
temperature dependence
thin films
Thin films
impurities
Temperature
electrical resistivity
temperature
Scattering
Impurities
surface treatment

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport in MoS2. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS2 thin film deposited on a SiO2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS2 thin film deposited on a SiO2 substrate with H2O2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS2 thin film deposited on a SiO2 substrate with (NH4)2Sx treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS2-based transistor performance.",
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AU - Su, Ting Hong

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N2 - This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport in MoS2. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS2 thin film deposited on a SiO2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS2 thin film deposited on a SiO2 substrate with H2O2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS2 thin film deposited on a SiO2 substrate with (NH4)2Sx treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS2-based transistor performance.

AB - This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport in MoS2. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS2 thin film deposited on a SiO2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS2 thin film deposited on a SiO2 substrate with H2O2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS2 thin film deposited on a SiO2 substrate with (NH4)2Sx treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS2-based transistor performance.

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