SiO₂ substrate passivation effects on the temperature-dependent electrical properties of MoS₂ prepared by the chemical vapor deposition method

This study uses the SiO₂ substrate passivation techniques to tune the electrical parameters of MoS₂ for analyzing the MoS₂-SiO₂ interaction effect on the electrical conductivity of MoS₂ and the carrier transport in MoS₂. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS₂ thin film deposited on a SiO₂ substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS₂ thin film deposited on a SiO₂ substrate with H₂O₂ treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS₂ thin film deposited on a SiO₂ substrate with (NH₄)₂S_x treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS₂-based transistor performance.