Abstract
This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport in MoS2. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS2 thin film deposited on a SiO2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS2 thin film deposited on a SiO2 substrate with H2O2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS2 thin film deposited on a SiO2 substrate with (NH4)2Sx treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS2-based transistor performance.
| Original language | English |
|---|---|
| Pages (from-to) | 10106-10111 |
| Number of pages | 6 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 28 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2017 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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SiO2 substrate passivation effects on the temperature-dependent electrical properties of MoS2 prepared by the chemical vapor deposition method. / Lin, Yow Jon; Su, Ting Hong.
In: Journal of Materials Science: Materials in Electronics, Vol. 28, No. 14, 01.07.2017, p. 10106-10111.Research output: Contribution to journal › Article
TY - JOUR
T1 - SiO2 substrate passivation effects on the temperature-dependent electrical properties of MoS2 prepared by the chemical vapor deposition method
AU - Lin, Yow Jon
AU - Su, Ting Hong
PY - 2017/7/1
Y1 - 2017/7/1
N2 - This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport in MoS2. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS2 thin film deposited on a SiO2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS2 thin film deposited on a SiO2 substrate with H2O2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS2 thin film deposited on a SiO2 substrate with (NH4)2Sx treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS2-based transistor performance.
AB - This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport in MoS2. A correlation between the temperature-dependent electrical properties and phonon and impurity scatterings is also determined. The MoS2 thin film deposited on a SiO2 substrate without surface treatment shows the weak temperature dependence of the carrier mobility and the MoS2 thin film deposited on a SiO2 substrate with H2O2 treatment shows the weak temperature dependence of the carrier mobility, whereas the MoS2 thin film deposited on a SiO2 substrate with (NH4)2Sx treatment exhibits the strong temperature dependence of the carrier mobility. The observed temperature evolution of resistivity is understood from the competition among the effects of phonon and impurity scatterings. It is important to identify the carrier transport behavior for enhancing the MoS2-based transistor performance.
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U2 - 10.1007/s10854-017-6772-2
DO - 10.1007/s10854-017-6772-2
M3 - Article
AN - SCOPUS:85015812876
VL - 28
SP - 10106
EP - 10111
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 14
ER -