Single-electron transistors and memory cells with AU colloidal islands

C. S. Wu, Chii Dong Chen, S. M. Shih, W. F. Su

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives were fabricated by hybridization of top-down electron-beam lithography. Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current were shown by low-temperature transport measurements. Results showed that the hysteresis was due to the presence of electrically isolated charge-storage islands.

Original languageEnglish
Pages (from-to)4595-4597
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number24
DOIs
Publication statusPublished - 2002 Dec 9

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this