Abstract
Single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives were fabricated by hybridization of top-down electron-beam lithography. Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current were shown by low-temperature transport measurements. Results showed that the hysteresis was due to the presence of electrically isolated charge-storage islands.
| Original language | English |
|---|---|
| Pages (from-to) | 4595-4597 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2002 Dec 9 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Single-electron transistors and memory cells with AU colloidal islands. / Wu, C. S.; Chen, Chii Dong; Shih, S. M.; Su, W. F.
In: Applied Physics Letters, Vol. 81, No. 24, 09.12.2002, p. 4595-4597.Research output: Contribution to journal › Article
TY - JOUR
T1 - Single-electron transistors and memory cells with AU colloidal islands
AU - Wu, C. S.
AU - Chen, Chii Dong
AU - Shih, S. M.
AU - Su, W. F.
PY - 2002/12/9
Y1 - 2002/12/9
N2 - Single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives were fabricated by hybridization of top-down electron-beam lithography. Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current were shown by low-temperature transport measurements. Results showed that the hysteresis was due to the presence of electrically isolated charge-storage islands.
AB - Single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives were fabricated by hybridization of top-down electron-beam lithography. Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current were shown by low-temperature transport measurements. Results showed that the hysteresis was due to the presence of electrically isolated charge-storage islands.
UR - http://www.scopus.com/inward/record.url?scp=0037049673&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037049673&partnerID=8YFLogxK
U2 - 10.1063/1.1527236
DO - 10.1063/1.1527236
M3 - Article
AN - SCOPUS:0037049673
VL - 81
SP - 4595
EP - 4597
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
ER -