Single-electron transistors and memory cells with AU colloidal islands

C. S. Wu; Chii Dong Chen; S. M. Shih; W. F. Su

doi:10.1063/1.1527236

Single-electron transistors and memory cells with AU colloidal islands

C. S. Wu, Chii Dong Chen, S. M. Shih, W. F. Su

Department of Physics

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22 Citations (Scopus)

Abstract

Single-electron transistors and memory cells with Au colloidal islands linked by C₆₀ derivatives were fabricated by hybridization of top-down electron-beam lithography. Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current were shown by low-temperature transport measurements. Results showed that the hysteresis was due to the presence of electrically isolated charge-storage islands.

Original language	English
Pages (from-to)	4595-4597
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	24
DOIs	https://doi.org/10.1063/1.1527236
Publication status	Published - 2002 Dec 9

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Wu, C. S., Chen, C. D., Shih, S. M., & Su, W. F. (2002). Single-electron transistors and memory cells with AU colloidal islands. Applied Physics Letters, 81(24), 4595-4597. https://doi.org/10.1063/1.1527236

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Access to Document

10.1063/1.1527236