Single-electron transistors and memory cells with AU colloidal islands

C. S. Wu, Chii Dong Chen, S. M. Shih, W. F. Su

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives were fabricated by hybridization of top-down electron-beam lithography. Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current were shown by low-temperature transport measurements. Results showed that the hysteresis was due to the presence of electrically isolated charge-storage islands.

Original languageEnglish
Pages (from-to)4595-4597
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number24
DOIs
Publication statusPublished - 2002 Dec 9

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single electron transistors
cells
lithography
hysteresis
electron beams
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wu, C. S. ; Chen, Chii Dong ; Shih, S. M. ; Su, W. F. / Single-electron transistors and memory cells with AU colloidal islands. In: Applied Physics Letters. 2002 ; Vol. 81, No. 24. pp. 4595-4597.
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Single-electron transistors and memory cells with AU colloidal islands. / Wu, C. S.; Chen, Chii Dong; Shih, S. M.; Su, W. F.

In: Applied Physics Letters, Vol. 81, No. 24, 09.12.2002, p. 4595-4597.

Research output: Contribution to journalArticle

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