Single-electron transistors and memory cells with AU colloidal islands

C. S. Wu, Chii Dong Chen, S. M. Shih, W. F. Su

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Single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives were fabricated by hybridization of top-down electron-beam lithography. Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current were shown by low-temperature transport measurements. Results showed that the hysteresis was due to the presence of electrically isolated charge-storage islands.

Original languageEnglish
Pages (from-to)4595-4597
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 2002 Dec 9


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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