Abstract
Single-electron transistors and memory cells with Au colloidal islands linked by C60 derivatives were fabricated by hybridization of top-down electron-beam lithography. Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current were shown by low-temperature transport measurements. Results showed that the hysteresis was due to the presence of electrically isolated charge-storage islands.
Original language | English |
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Pages (from-to) | 4595-4597 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2002 Dec 9 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)