Simulation of N-face InGaN-based p-i-n solar cells

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

GaN/InGaN p-i-n solar cells with N-face are simulated. In contrast to the detrimental effect of normal polarization, the internal electric field induced by reversed polarization enhances the efficiency of carrier collection by enlarging the energy band tilting to the favorable direction in the InGaN absorption layer. This beneficial effect becomes more remarkable when the indium composition of the InGaN absorption layer is higher.

Original languageEnglish
Article number033109
JournalJournal of Applied Physics
Volume112
Issue number3
DOIs
Publication statusPublished - 2012 Aug 1

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solar cells
polarization
energy bands
indium
simulation
expansion
electric fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Simulation of N-face InGaN-based p-i-n solar cells",
abstract = "GaN/InGaN p-i-n solar cells with N-face are simulated. In contrast to the detrimental effect of normal polarization, the internal electric field induced by reversed polarization enhances the efficiency of carrier collection by enlarging the energy band tilting to the favorable direction in the InGaN absorption layer. This beneficial effect becomes more remarkable when the indium composition of the InGaN absorption layer is higher.",
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Simulation of N-face InGaN-based p-i-n solar cells. / Chang, Jih Yuan; Kuo, Yen Kuang.

In: Journal of Applied Physics, Vol. 112, No. 3, 033109, 01.08.2012.

Research output: Contribution to journalArticle

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