Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes

Sheng Horng Yen, Bo Jean Chen, Yen Kuang Kuo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Optical properties of the InGaN violet and ultraviolet multiple-quantum- well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385-410 nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405 nm.

Original languageEnglish
Pages (from-to)1029-1037
Number of pages9
JournalOptical and Quantum Electronics
Volume38
Issue number12-14
DOIs
Publication statusPublished - 2006 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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