Abstract
Optical properties of the InGaN violet and ultraviolet multiple-quantum- well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385-410 nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 1029-1037 |
| Number of pages | 9 |
| Journal | Optical and Quantum Electronics |
| Volume | 38 |
| Issue number | 12-14 |
| DOIs | |
| Publication status | Published - 2006 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes. / Yen, Sheng Horng; Chen, Bo Jean; Kuo, Yen Kuang.
In: Optical and Quantum Electronics, Vol. 38, No. 12-14, 01.09.2006, p. 1029-1037.Research output: Contribution to journal › Article
TY - JOUR
T1 - Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes
AU - Yen, Sheng Horng
AU - Chen, Bo Jean
AU - Kuo, Yen Kuang
PY - 2006/9/1
Y1 - 2006/9/1
N2 - Optical properties of the InGaN violet and ultraviolet multiple-quantum- well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385-410 nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405 nm.
AB - Optical properties of the InGaN violet and ultraviolet multiple-quantum- well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385-410 nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405 nm.
UR - http://www.scopus.com/inward/record.url?scp=33947234574&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33947234574&partnerID=8YFLogxK
U2 - 10.1007/s11082-006-9016-x
DO - 10.1007/s11082-006-9016-x
M3 - Article
AN - SCOPUS:33947234574
VL - 38
SP - 1029
EP - 1037
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
SN - 0306-8919
IS - 12-14
ER -