Abstract
Optical properties of the InGaN violet and ultraviolet multiple-quantum- well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385-410 nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405 nm.
Original language | English |
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Pages (from-to) | 1029-1037 |
Number of pages | 9 |
Journal | Optical and Quantum Electronics |
Volume | 38 |
Issue number | 12-14 |
DOIs | |
Publication status | Published - 2006 Sep 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering