Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes

Sheng Horng Yen, Bo Jean Chen, Yen Kuang Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical properties of the InGaN violet and ultraviolet multiple-quantum- well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 370 to 410 nm, are investigated and compared. The feasibility of using multiquantum barriers and doped barriers to improve the laser performance is numerically evaluated. The characteristic temperatures for the laser diodes under study will be investigated. Optimization of the structures for InGaN violet and ultraviolet multiple-quantum-well laser diodes will be attempted.

Original languageEnglish
Title of host publication2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages11-12
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore
Duration: 2006 Sep 112006 Sep 14

Publication series

Name2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

Other

Other2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
CountrySingapore
CityNanyang
Period06-09-1106-09-14

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All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Yen, S. H., Chen, B. J., & Kuo, Y. K. (2006). Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes. In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 (pp. 11-12). [4098756] (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06). https://doi.org/10.1109/NUSOD.2006.306716