Abstract
Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.
| Original language | English |
|---|---|
| Pages (from-to) | 7916-7918 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 44 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2005 Nov 9 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer. / Chang, Yi An; Luo, Chuan Yu; Kuo, Hao Chung; Kuo, Yen-Kuang; Lin, Chia Feng; Wang, Shing Chung.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 11, 09.11.2005, p. 7916-7918.Research output: Contribution to journal › Article
TY - JOUR
T1 - Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer
AU - Chang, Yi An
AU - Luo, Chuan Yu
AU - Kuo, Hao Chung
AU - Kuo, Yen-Kuang
AU - Lin, Chia Feng
AU - Wang, Shing Chung
PY - 2005/11/9
Y1 - 2005/11/9
N2 - Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.
AB - Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.
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U2 - 10.1143/JJAP.44.7916
DO - 10.1143/JJAP.44.7916
M3 - Article
AN - SCOPUS:31544440957
VL - 44
SP - 7916
EP - 7918
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11
ER -