Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

Yi An Chang; Chuan Yu Luo; Hao Chung Kuo; Yen-Kuang Kuo; Chia Feng Lin; Shing Chung Wang

doi:10.1143/JJAP.44.7916

Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

Yi An Chang, Chuan Yu Luo, Hao Chung Kuo, Yen-Kuang Kuo, Chia Feng Lin, Shing Chung Wang

Department of Physics

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T₀) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T₀ value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T ₀ value is mainly attributed to the increase in electronic leakage current.

Original language	English
Pages (from-to)	7916-7918
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.44.7916
Publication status	Published - 2005 Nov 9

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Chang, Y. A., Luo, C. Y., Kuo, H. C., Kuo, Y-K., Lin, C. F., & Wang, S. C. (2005). Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(11), 7916-7918. https://doi.org/10.1143/JJAP.44.7916

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title = "Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer",

abstract = "Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20{\%}. When Al = 25{\%}, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7{\%} in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.",

author = "Chang, {Yi An} and Luo, {Chuan Yu} and Kuo, {Hao Chung} and Yen-Kuang Kuo and Lin, {Chia Feng} and Wang, {Shing Chung}",

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Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer. / Chang, Yi An; Luo, Chuan Yu; Kuo, Hao Chung; Kuo, Yen-Kuang; Lin, Chia Feng; Wang, Shing Chung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 11, 09.11.2005, p. 7916-7918.

Research output: Contribution to journal › Article

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T1 - Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

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AU - Luo, Chuan Yu

AU - Kuo, Hao Chung

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AU - Lin, Chia Feng

AU - Wang, Shing Chung

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N2 - Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.

AB - Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.

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Access to Document

10.1143/JJAP.44.7916