Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

Yi An Chang; Chuan Yu Luo; Hao Chung Kuo; Yen-Kuang Kuo; Chia Feng Lin; Shing Chung Wang

doi:10.1143/JJAP.44.7916

Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

Yi An Chang, Chuan Yu Luo, Hao Chung Kuo, Yen-Kuang Kuo, Chia Feng Lin, Shing Chung Wang

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T₀) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T₀ value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T ₀ value is mainly attributed to the increase in electronic leakage current.

Original language	English
Pages (from-to)	7916-7918
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.44.7916
Publication status	Published - 2005 Nov 9

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{19f4637232d04c5cbfff124f5b6e36aa,

title = "Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer",

abstract = "Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.",

author = "Chang, {Yi An} and Luo, {Chuan Yu} and Kuo, {Hao Chung} and Yen-Kuang Kuo and Lin, {Chia Feng} and Wang, {Shing Chung}",

year = "2005",

month = nov,

day = "9",

doi = "10.1143/JJAP.44.7916",

language = "English",

volume = "44",

pages = "7916--7918",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

}

Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer. / Chang, Yi An; Luo, Chuan Yu; Kuo, Hao Chung; Kuo, Yen-Kuang; Lin, Chia Feng; Wang, Shing Chung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 11, 09.11.2005, p. 7916-7918.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

AU - Chang, Yi An

AU - Luo, Chuan Yu

AU - Kuo, Hao Chung

AU - Kuo, Yen-Kuang

AU - Lin, Chia Feng

AU - Wang, Shing Chung

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AB - Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.

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