Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

Yi An Chang, Chuan Yu Luo, Hao Chung Kuo, Yen-Kuang Kuo, Chia Feng Lin, Shing Chung Wang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.

Original languageEnglish
Pages (from-to)7916-7918
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number11
DOIs
Publication statusPublished - 2005 Nov 9

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quaternary alloys
Quantum well lasers
quantum well lasers
Indium
aluminum
Aluminum
indium
threshold currents
electronics
simulation
Chemical analysis
Lasers
Leakage currents
lasers
leakage
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer",
abstract = "Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20{\%}. When Al = 25{\%}, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7{\%} in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.",
author = "Chang, {Yi An} and Luo, {Chuan Yu} and Kuo, {Hao Chung} and Yen-Kuang Kuo and Lin, {Chia Feng} and Wang, {Shing Chung}",
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language = "English",
volume = "44",
pages = "7916--7918",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
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Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer. / Chang, Yi An; Luo, Chuan Yu; Kuo, Hao Chung; Kuo, Yen-Kuang; Lin, Chia Feng; Wang, Shing Chung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 11, 09.11.2005, p. 7916-7918.

Research output: Contribution to journalArticle

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AU - Chang, Yi An

AU - Luo, Chuan Yu

AU - Kuo, Hao Chung

AU - Kuo, Yen-Kuang

AU - Lin, Chia Feng

AU - Wang, Shing Chung

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AB - Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.

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