Abstract
Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.
| Original language | English |
|---|---|
| Pages (from-to) | 7916-7918 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 44 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2005 Nov 9 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Chang, Y. A., Luo, C. Y., Kuo, H. C., Kuo, Y-K., Lin, C. F., & Wang, S. C. (2005). Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(11), 7916-7918. https://doi.org/10.1143/JJAP.44.7916