Abstract
The photovoltaic characteristics of Ga-face GaN/InGaN p-i-n solar cells are investigated numerically. The severe polarization and barrier effects induced by the GaN/InGaN hetero-interfaces are demonstrated to be detrimental for the carrier collection. The conversion efficiency could be degraded to be out of application when the degree of polarization and/or indium composition are high. To efficiently eliminate both critical issues, the solar cell structure with appropriate band engineering is introduced. In the proposed structure, the photovoltaic characteristics not only show high-grade performance but also become insensitive to the degree of polarization, even in the situation of high indium composition.
| Original language | English |
|---|---|
| Article number | 6334407 |
| Pages (from-to) | 17-23 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 49 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Simulation of high-efficiency GaN/InGaN p-i-n solar cell with suppressed polarization and barrier effects. / Chang, Jih-Yuan; Yen, Shih Hsun; Chang, Yi An; Kuo, Yen-Kuang.
In: IEEE Journal of Quantum Electronics, Vol. 49, No. 1, 6334407, 01.01.2013, p. 17-23.Research output: Contribution to journal › Article
TY - JOUR
T1 - Simulation of high-efficiency GaN/InGaN p-i-n solar cell with suppressed polarization and barrier effects
AU - Chang, Jih-Yuan
AU - Yen, Shih Hsun
AU - Chang, Yi An
AU - Kuo, Yen-Kuang
PY - 2013/1/1
Y1 - 2013/1/1
N2 - The photovoltaic characteristics of Ga-face GaN/InGaN p-i-n solar cells are investigated numerically. The severe polarization and barrier effects induced by the GaN/InGaN hetero-interfaces are demonstrated to be detrimental for the carrier collection. The conversion efficiency could be degraded to be out of application when the degree of polarization and/or indium composition are high. To efficiently eliminate both critical issues, the solar cell structure with appropriate band engineering is introduced. In the proposed structure, the photovoltaic characteristics not only show high-grade performance but also become insensitive to the degree of polarization, even in the situation of high indium composition.
AB - The photovoltaic characteristics of Ga-face GaN/InGaN p-i-n solar cells are investigated numerically. The severe polarization and barrier effects induced by the GaN/InGaN hetero-interfaces are demonstrated to be detrimental for the carrier collection. The conversion efficiency could be degraded to be out of application when the degree of polarization and/or indium composition are high. To efficiently eliminate both critical issues, the solar cell structure with appropriate band engineering is introduced. In the proposed structure, the photovoltaic characteristics not only show high-grade performance but also become insensitive to the degree of polarization, even in the situation of high indium composition.
UR - http://www.scopus.com/inward/record.url?scp=84870509418&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870509418&partnerID=8YFLogxK
U2 - 10.1109/JQE.2012.2225601
DO - 10.1109/JQE.2012.2225601
M3 - Article
AN - SCOPUS:84870509418
VL - 49
SP - 17
EP - 23
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 1
M1 - 6334407
ER -