Simulation of deep ultraviolet light-emitting diodes

Yen Kuang Kuo, Sheng Horng Yen, Yu Wen Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)


Optical characteristics of deep ultraviolet light-emitting diodes with the consideration of spontaneous and piezoelectric polarizations are studied in this article with the APSYS (Advanced Physical Model of Semiconductor Devices) simulation program. The amounts of surface charges caused by different polarizations are calculated and compared. Moreover, the band diagram, carrier distribution, radiative recombination current, and light-current performance curves of the InAlGaN UV LED structures with different polarizations are also discussed and investigated. According to the simulated results, we find that the influence of the spontaneous polarization is more apparent than the piezoelectric polarization on band properties, carrier distribution, radiative recombination and output power in deep UV spectral region. In other words, for nitride materials in deep UV region, the polarization resulted from lattice-mismatch is smaller than that caused by asymmetry of the structure along the c-axis. This conclusion is quite different from the situation of blue InGaN light-emitting diodes. For blue LEDs, the piezoelectric polarization is the dominant polarization mechanism because the lattice mismatch between compound layers is a severe problem for these long-wavelength LED devices.

Original languageEnglish
Title of host publicationSeventh International Conference on Solid State Lighting
Publication statusPublished - 2007 Dec 1
Event7th International Conference on Solid State Lighting - San Diego, CA, United States
Duration: 2007 Aug 272007 Aug 29


Other7th International Conference on Solid State Lighting
CountryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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