The numerical investigation of laser performance of the blue InGaN laser diode structures with a laser technology integrated program simulation program was presented. The phenomenon and resolution of the electronic current overflow problem in the blue InGaN quantum-well lasers were also investigated. It was found that inhomogeneous hole distribution in the quantum wells played an important role in the laser performance as a function of the number of InGaN well layers.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)