Simulation of blue InGaN quantum-well lasers

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Abstract

The numerical investigation of laser performance of the blue InGaN laser diode structures with a laser technology integrated program simulation program was presented. The phenomenon and resolution of the electronic current overflow problem in the blue InGaN quantum-well lasers were also investigated. It was found that inhomogeneous hole distribution in the quantum wells played an important role in the laser performance as a function of the number of InGaN well layers.

Original languageEnglish
Pages (from-to)4992-4998
Number of pages7
JournalJournal of Applied Physics
Volume93
Issue number9
DOIs
Publication statusPublished - 2003 May 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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